Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Chinese Journal of High Pressure Physics》 2003-01
Add to Favorite Get Latest Update

Study on Electronic Structure of ZnS:Mn 2+

SHEN Han-Xin1,SHEN Yao-Wen2(1.Department of Computer,Longyan Teachers College,Longyan 364000,China; 2.Department of Physics,Xiamen University,Xiamen 361005,China)[KH+3mmD]  
The electronic structures of Mn 2+ luminescence centers in Mn-doped ZnS are studied by using first-principles linear muffin-tin-orbital method combining atomic sphere approximation.The calculated results for ZnS:Mn 2+ show that the property of impurity energy level for single bug satisfies the theory of crystal potential field,and the influence of impurity energy level caused by concentration of impurity is not evident,which is consistents with the experiment results.
【Fund】: 20 0 2年福建省教育厅科技项目 (JA0 2 2 6 2 );; 龙岩师范高等专科学校自然科学研究项目 (ZR3)
【CateGory Index】: O472.4
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 2 Hits
1 HE Kai-Hua~(1,2),YU Fei~(2,3),JI Guang-Fu~2,YAN Qi-Li~3,ZHENG Shu-Kui~4(1.College of Mathematics and Physics,China University of Geosciences,Wuhan 430074,China;2.Institute of Fluid Physics CAEP,Mianyang 621900,China;3.Institute of Solid States,Sichuan Normal University,Chengdu 610066,China;4.Department of Architecture,Xihua University,Chengdu 610039,China);Study of Optical Properties and Electronic Structure of V in ZnS by First Principles[J];Chinese Journal of High Pressure Physics;2006-01
2 CHEN Jian-hua1,ZENG Xiao-qin2,CHEN Ye1,ZHANG Hui-peng2 (1.College of Resources and Metallurgy,Guangxi University,Nanning 530004,China;2.College of Chemistry and Chemical Engineering,Guangxi University,Nanning 530004,China);First-principle theory calculations of electronic structure of sphalerite with vacancy and impurity[J];The Chinese Journal of Nonferrous Metals;2010-04
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 HUANG Kun, FAN Guang-han, TAN Chun-hua, LI Shu-ti,WU Wen-guang, LI Hua-bing, LEI Yong(Institute of Optoelectronic Material and Technology,South China Normal University,Guangzhou 510631,CHN);Effect of Strain on Band Gap Bowing and Band Structure of Al_xGa_(1-x)N[J];Semiconductor Optoelectronics;2005-04
2 XIE Zi-li,ZHANG Rong,BI Zhao-xia,LIU Bin,XIU Xiang-qian,GU Shu-lin,JIANG Ruo-lian,HAN Ping,ZHU Shun-ming,SHEN Bo,SHI Yi,ZHENG You-dou(Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology,Department of Physics,Nanjing University,Nanjing 210093,China);Fabrication and application of InN films[J];Micronanoelectronic Technology;2004-12
3 Li Jianguang, Ye Zhizhen, Wang Lei, Zhao Binghui, Yuan Jun, Que Duanlin(State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou\ 310027)Received 3 May 1998, revised manuscript received 12 June 1998;Characterization of ZnO Thin Film Treated With High Temperature for Buffer Layer of GaN on Silicon Substrate[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-10
4 YE Zhi-zhen,CHEN Han-hong,LIU Rong,ZHANG Hao-xiang and ZHAO Bin-hui(National Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 3100 27,China);Structure and PL Spectrum of ZnO Films Prepared by DC Reactive Magnetron Sputtering[J];Chinese Journal of Semiconductors;2001-08
5 Jin Ruiqin,Zhu Jianjun,Zhao Degang,Liu Jianpin,Zhang Jicai,and Yang Hui(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China);Investigations on Mg-Doping of p-GaN[J];Chinese Journal of Semiconductors;2005-03
6 Zhang Deheng ( Department of Physics, Shandong University, Jinan, 250100);Shift of Optical Absorption Edgesin Transparent Conducting Films[J];;1998-03
7 ;The Comparison of Various Preparation Methods and Properties for ZnS Bulk Material[J];Materials Review;1995-04
8 Yu Jiangbo Yuan Ximing Chen Jingzhong(China University of Geosciences,Wuhan 430074);Present Status and Progress in Study of Nano Luminescent Materials[J];Materials Review;2001-01
9 JIA Baoping HE Yuehui TANG Jiancheng DENG Yida HUANG Boyun LIU Yexiang (State Key Laboratory for Powder Metallurgy ,Central South University,Changsha 410083,China);Review of Investigation and Application of ZnS Doping Technology[J];Materials Review;2002-08
10 LIU Xian-hao, ZHAO Hong-chi, LIANG Shu-jun (China Lucky Film Co. , Baoding 071054, China; Department of Chemistry, Baoding Teachers College, Baoding 071000, China; Department of Material Engineering, College Branch of North China Institute of Technology, Taiyuan 030008, China);Progress of Research of Photoluminescence Materials[J];Magnetic Recording Materials;2005-04
【Secondary References】
Chinese Journal Full-text Database 4 Hits
1 LIU Jian-jun,ZHANG Zhi-min (Department of Physics and Electronic Information,Huaibei Coal Industry Teachers college,Huaibei Anhui 235000,China);First-principles Calculation of Cu-doped ZnS[J];Journal of Anhui University of Science and Technology(Natural Science);2008-04
2 JIANG Hong-yi,JI Tong-kun,LI Jia-liang (School of Materials Science and Engineering,Wuhan University of Technology,Wuhan 430070,China);Theoretic Calculation on the Electronic Structures of Sr_2MgSi_2O_7 by B-doping[J];Journal of Wuhan University of Technology;2008-09
3 CHEN Jian-hua1,CHEN Ye2,ZENG Xiao-qin2,LI Yu-qiong2 1.College of Resources and Metallurgy,Guangxi University,Nanning 530004,China;2.College of Chemistry and Chemical Engineering,Guangxi University,Nanning 530004,China;First principle study of effect of Fe impurity on electronic structure and activation of sphalerite surface[J];The Chinese Journal of Nonferrous Metals;2009-08
4 CHEN Jian-hua1,ZENG Xiao-qin2,CHEN Ye1,ZHANG Hui-peng2 (1.College of Resources and Metallurgy,Guangxi University,Nanning 530004,China;2.College of Chemistry and Chemical Engineering,Guangxi University,Nanning 530004,China);First-principle theory calculations of electronic structure of sphalerite with vacancy and impurity[J];The Chinese Journal of Nonferrous Metals;2010-04
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved