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《Acta Photonica Sinica》 2004-02
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Analyzing of Line Profile for Laser Direct Writing Lithography

Li Fengyou 1,2, Xie Yongjun 2, Sun Qiang 1,2,Cao Zhaoliang 2, Lu Zhenwu 2, Wang Zhaoqi 1 1 Institute of Modern Optics, Nankai University, Tianjin 300071 2 State Key Lab of Applied Optics,Changchun Institute of Optics, Fine Mechanics and Physics, The Chinese Academy of Sciences, Changchun,Jilin 130022  
Considering effect of the photoresist film absorbing light energy, a model for describing the intensity distribution under various depths in the photoresist is more accurately presented on the base of previous model. The numerical values of the exposure distribution are calculated by using iterative method, and its plots related to the depth in photoresist are given subsequently. Line profile in photoresist is analyzed in term of the plots of the exposure distribution under different exposure dose so as to give a scheme for choosing optimum exposure dose in laser direct writing lithography. The experimental results in laser direct writing lithography show good agreements with theoretical calculation by using this model.
【Fund】: 国家自然科学基金 (6 0 0 780 0 6 );; 中科院创新基金资助项目
【CateGory Index】: TN249
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