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《Acta Photonica Sinica》 2005-06
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Investigation of Mechanisms on 1/f Noise and G-R Noise in Optoelectronic Coupled Devices

Bao Junlin, Zhuang Yiqi, Du Lei, Ma Zhongfa, Li Weihua, Li Cong Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi′an 710071  
Experimental dependences on bias current and physical mechanisms of 1/f noise and g-r noise (generation-recombination noise) in Optoelectronic Coupled Devices (OCDs) are studied. Experimental results demonstrate that g-r noise of OCDs emerges with 1/f noise in the range of low frequencies and both of them have a similar rule, that is to say, in the beginning, magnitudes of g-r noise and 1/f noise increase and then decrease with the bias current keep increasing. From measuring noise of the front part and back part in OCDs, it is found that g-r noise source in OCDs lies in the photosensitive transistor. Based on mechanisms of carrier fluctuation, it is discussed that 1/f noise in OCDs belongs to surface 1/f noise and g-r noise is due to trapping and detrapping processes between carriers and deep-level in the emitter space-charge region of photosensitive transistor.
【Fund】: 国家自然科学基金(No.60276028);; 国防预研基金(No.51411040601DZ014);; 国防科技重点实验室基金(No.51433030103DZ01)资助
【CateGory Index】: TN364
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