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《Acta Photonica Sinica》 2007-04
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Effects of Boron Implanted Dose on the Diffusion Length of Minority Carriers in HgCdTe n-on-p Junction

CHEN Gui-bin1,2, QUAN Zhijue2, WANG Shaowei2, LU Wei2 (1 Jiangsu key Laboratory for Chemistry of Low Dimensional Material and Physics Department, Huaiyin Teachers college,Huaian 223001,China) (2 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083,China)  
The line scan and mapping profiles of a series of HgCdTe n-on-p junctions with different boron implantation dose have been measured by laser beam induced current.The n-type region is larger than the actually boron-implanted area.The minority carrier diffusion length both inside and outside at p-n junction boundary can be extracted from the LBIC line scan profile.The response enhancement for the small optically sensitive area devices is due to enlarging the n-type area and carriers collecting effect on the external side.
【Fund】: 国家自然科学基金(60244002 10234040);; 江苏省高校自然科学研究项目(05KJD140038)资助
【CateGory Index】: TN215
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