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《Journal of Natural Science of Heilongjiang University》 1993-01
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An Experiment Investigation of Field-Effect Transistors In the Region of Law Temperature

Xu Weijie Liu Lu  
Field-Effect Transistors were carefully measured in the region of law temperature and the results of the experiments were analyzed and discussed.
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【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 Wang Guihua/Harbin Institute of Technology, HarbinYu Dun/Harbin Institute of Technology, HarbinWang Yaolin/Harbin Institute of Technology, Harbin;Analysis of pH-ISFET Temperature Characteristics and Temperature Compensation Approaches[J];Chinese Journal of Semiconductors;1988-03
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3 ZHANG Wen-kai,WANG Hong-wei,QI Chen-jie (School of Applied Science,Beijing Information Science and Technology University,Beijing 100192,China);NPN superhigh frequency small power transistor array design[J];Journal of Beijing Information Science & Technology University;2012-02
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9 Xu Xicheng;OPERATION PRINCIPLES AND LAYOUT DESIGN OF THE HJ1310 PHASE-LOCKED LOOP FM STEREO DEMODULATOR[J];Journal of South China Normal University(Natural Science);1985-01
10 ZHANG Hai-peng, QIN Hui-bin, CHENG Xiao-jun (Electronic & Information College, Hangzhou Institute of Electronic Engineering, Hangzhou Zhejiang 310018,China);Influences of Leakage-Current on DC Transfers Characteristicof Inverter at High Temperature[J];Journal of Hangzhou Institute of Electronic Engineering;2004-01
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