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THERMAL ANALYSIS OF MULTILEVEL METAL ROUTING IN 0.1 μm ULSI TECHNOLOGY

HE Xu-shu,HUANG He,PEI Song-wei,BAO Su-su(School of Computer,South China Normal University,Guangzhou 510631,China)  
Thermal model of multilevel metal interconnects is studied.Different dielectric material,metal wire separation,metal level separation and current density for impact of multilevel metal interconnects are calculated in detail.After considering these factors,the result indicates that the temperature of multilevel metal interconnects draws close to the actual temperature distribution much more.Furthermore,the theory foundation is presented so that the IC designer can design chip with higher performance and higher reliability.
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