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《Journal Infrared Millimeter and Waves》 2005-01
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RESEARCH ON IMPROVED METHODS OF REDUCTION OF BEND LOSS OF SILICON-ON-INSULATOR WAVEGUIDES

CHEN Yuan-Yuan, YU Jin-Zhong, CHEN Shao-Wu, FAN Zhong-Chao(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)  
Improved methods of reduction of bend loss of silicon-on-insulator waveguides were simulated and analyzed by means of effective index method (EIM) and two dimensional beam propagation method (2D-BPM). The simulation results indicate that two different methods, one of which are introducing an offset at the junction of two waveguides and the other is etching groove at the outside of bend waveguide, can decrease bend loss. And the later one is more effective. Meanwhile, experiments validate them. By etching groove, the insertion loss of bend waveguide of R=16mm, transverse displacement 70μm was decreased 5dB. And its bend loss was almost eliminated.
【Fund】: 国家科技部“973”计划(G2000 03 66);; “863”计划(20002AA312060);; 国家自然科学基金资助项目(60336010)
【CateGory Index】: TN252;TN814.6
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