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《Journal of Infrared and Millimeter Waves》 2015-01
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Optimization and performance of p-GaAs homojunction THz detectors

QIAN Fei;WANG Tian-Meng;ZHANG Yue-Heng;SHEN Wen-Zhong;Key Laboratory of Artificial Structures and Quantum Control,Ministry of Education,Department of physics and astronomy,Shanghai Jiao Tong university;  
In order to improve the quantum efficiency of THz detectors made of p-GaAs homojunction,the effects of temperature and bias voltage were taken into account. By optimizing the materials and structure parameters of the resonant cavity enhanced p-Ga As HIWIP detectors,its quantum efficiency was increased to 17%. The relationships among the responsivity and detectivity of the detector,bias voltage,temperature and spectral frequency were simulated,leading to an optimized bias voltage range( 10~40 m V),an optimal temperature( 8 K) and a maximum detectivity( 4.1 ×1010cm Hz1/2/W). By applying a pair of matched mirror,the ultimate quantum efficiency,the detectivity and the responsivity are 26%,5.7×1010 cm Hz1/2/ W and 25.9 A/W,respectively.
【Fund】: 国家自然科学基金(11074167 91221201 61234005);; 863计划(2011AA010205)~~
【CateGory Index】: O572.212
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