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Analysis on effects of thermal treatment on structural characteristic of ion beam sputtering SiO_2 films

Ji Yiqin 1,2,Jiang Yugang 2,3,Liu Huasong 2,Wang Lishuan 2,Liu Dandan 2,Jiang Chenghui 2, Yang Yaping 3,Fan Rongwei 1,Chen Deying 1(1.National Key Laboratory of Science and Technology on Tunable Laser,Institute of Optical-electronics,Harbin Institute of Technology,Harbin 150080,China;2.Tianjin Key Laboratory of Optical Thin Film,Tianjin Jinhang Institute of Technical Physics,Tianjin 300192,China;3.Key Laboratory of Advanced Micro-structure Materials,Ministry of Education,Department of Physics,Tongji University,Shanghai 200092,China)  
SiO 2 films were deposited on fuse d silica substrates by ion beam sputtering(IBS) technology, and the effects of thermal treatment on structural characteristic were researched.The effects of annealing temperature on surface roughness of IBS-SiO 2 films were very large,low annealing temperature could reduce the surface roughness,but high annealing temperature could increase the surface roughness,the proper annealing temperature had almost no impact on surface roughness.Amorphous structures of IBSSiO 2 films were researched by XRD technology.When the annealing temperature was 550 ℃,the largest short range order and the shortest average distance were obtained,the results were the same as the fused silica substrate,and the structure was stable.Expermental results show that structural characteristic of IBS-SiO 2 films can be improved by the proper thermal treatment.
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