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《Chemical Industry and Engineering》 2009-06
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Rapid Growth of ZnO Under High Pressure and Its Raman Spectrum

ZHANG Hai-ning~1,ZHU Mao-dian~1,LU Zhong~2(1.Changzhou Institute of Light Industry,Changzhou 213164,Jiangsu Province,China;2.Jiangsu Polytechnic University,Changzhou 213164,Jiangsu Province,China)  
The phenomenon of the rapid growth of ZnO single crystal was analysed by using the basic theory of ceramic sintering and the characteristics of high-pressure sintering.At the same time,the obtained ZnO single crystal was studied by combining with Raman spectrum.The results showed the growth rate of ZnO was greatly increased by high-pressure sintering process,it was nearly 960 times to that under the atmospheric pressure at(900 ℃.) The reason of which was probably caused by the great increase of zinc ion concentration in the gap under the high pressure.Analysed by Raman spectrum,the quality of crystal which was obtained under high pressure was improved with increasing temperature.
【CateGory Index】: O614.241
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