Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Laser & Optoelectronics Progress》 2015-06
Add to Favorite Get Latest Update

Theoretical Study of Electrical and Optical Properties of Ge-Doped 6H-SiC

Zang Yuan;Cao Lin;Li Lianbi;Lin Tao;Yang Fei;Department of Electronic Engineering, Xi′an University of Technology;Department of New Electrical Materials & Microelectronics, State Grid Smart Grid Research Institute;  
Electronic structure and optical properties of Ge-doped 6H-Si C(GexSi1- xC) are calculated by ultrasoft pseudopotential technology of total energy- plane wave based on the density functional theory. The formation energy of impurities illustrates that Ge dopants prefer to occupy the substitutional Si sites for lower energy and more stable state. Analysis band structures, density of states and optoelectronic characteristics of6H-Si C shows that the valence band maximum is determined by C-2p states and the conduction band minimum is occupied by the Si-3p orbital. With more Ge content is incorporated within the structure, the conduction band minimum of GexSi1- xC has moved to lower energy and changes to be determined by Ge- 4p states. Dielectric function illustrates that the electronic transition in Ge0.333Si0.667 C which has a maximum Ge content is more simple than in 6H- Si C, and it′ s absorption edge and peaks are red- shifted to lower energy by 0.9 e V and 3.5 e V,respectively.
【Fund】: 国家自然科学家基金(51402230);; 陕西省教育厅自然科学基金(14JK1302);; 国家电网公司科技项目(5455DW140003 5455DW130008);; 北京市科技计划项目(D13110300190000)
【CateGory Index】: TN304.2
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【Citations】
Chinese Journal Full-text Database 6 Hits
1 Huang Huolin1 Zhang Feng1 Wu Zhengyun1 Qi Hongji2 Yao Jianke2Fan Zhengxiu2 Shao Jianda21Department of Physics,Xiamen University,Xiamen,Fujian 361005,China2Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Design and Fabrication of Al_2O_3/SiO_2 Double-Layer Antireflection Coatings on 4H-SiC Substrate[J];Acta Optica Sinica;2008-12
2 ZANG Yuan;LI Lianbi;LIN Shenghuang;CAO Lin;Department of Electronic Engineering,Xi′an University of Technology;College of Science,Xi′an Polytechnic University;;Ferromagnetism in Etched Aluminum-doped 6H-SiC[J];Research & Progress of SSE;2013-05
3 Liqiang Zhang;Zhuang Zhuo;Rusheng Wei;Yunzheng Wang;Xiufang Chen;Xiangang Xu;School of Information Science and Engineering,Shandong University;State Key Laboratory of Crystal Material,Shandong University;;Wavelength tunable passively Q-switched Yb-doped double-clad fiber laser with graphene grown on SiC[J];中国光学快报(英文版);2014-02
4 Zhou Guanggang Lu Guiwu Yu Yinghui Zhang Wansong Zhao Kun(Department of Mathematics and Physics,China University of Petroleum,Beijing 102249,China);Calculation for Linear and Nonlinear Optical Properties of LBO Crystals[J];Chinese Journal of Lasers;2010-05
5 Zhang Feng;Key Laboratory of Optical System Advanced Manufacturing Technology,Changchun Institute of Optics Fine Mechanics and Physics,Chinese Academy of Sciences;;Combined Type Polishing of Silicon Modification Layer on Silicon Carbide Mirror for Space Camera[J];Chinese Journal of Lasers;2013-07
6 Fan Di;Key Laboratory of Optical System Advanced Manufacturing Technology,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences;;Optimization of SiC Mirror Surface Roughness[J];Laser & Optoelectronics Progress;2014-09
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 MA Songshan,XU Hui,XIA Qinglin(School of Physical Science and Technology,Central South University,Changsha 410083);First-principles Calculations for the Electronic Structure and Optical Properties of Ta_2N_3[J];Materials Review;2010-14
2 LI Sheng-Zhi1,LIU Jin-Chao1,YANG Xiang-Dong1,JIANG De-Qiong2(1.Institute of Atomic and Molecular Physics,Sichuan University,Chengdu 610065,China; 2.Institute of Solid State Physics & School of Physics and Electronic Engineering, Sichuan Normal University,Chengdu 610068,China);First-Principles Study of Al,N Codoped p-Type ZnS[J];Chinese Journal of High Pressure Physics;2011-06
3 LI Jian-hua,CUI Yuan-shun,CHEN Gui-bin(College of Physics and Electronic Electrical Engineering,Huaiyin Normal University,Huaian,Jiangsu 223300,China);Structural Phase Transition,Electronic Structures and Optical Properties of GaN[J];Acta Photonica Sinica;2013-02
4 ZHAO Yong-hong1,2,KONG Chun-yang1,2,QIN Guo-ping1,2,3,LI Wan-jun1,2,3, RUAN Hai-bo1,2,3,MENG Xiang-dan1,2,BIAN Ping1,2,XU Qing1,2,ZHANG Ping1,2(1.Key Laboratory of Optical engineering,Chongqing Normal University,Chongqing 401331; 2.Key Laborat of Optoelectronic functional materials,Chongqing 401331; 3.College of Physics,Chongqing University,Chongqing 401331,China);The Investigation on the Microstructure and Electrical Properties of p-type ZnO∶In-N Films[J];Journal of Chongqing Normal University(Natural Science);2013-03
5 Yan Wanjun 1,2 Zhang Chunhong 1 Gui Fang 1 Zhang Zhongzheng 1 Xie Quan 2 Guo Benhua 1 Zhou Shiyun 1 1 Department of Physics and Electronic Science,Anshun University,Anshun,Guizhou561000,China 2 Institute of New Type Optoelectronic Materials and Technology,College of Science,Guizhou University,Guiyang,Guizhou550025,China;Electronic Structure and Optical Properties of Stressed β-FeSi_2[J];Acta Optica Sinica;2013-07
6 WANG Zhe;FENG Xian-yang;WANG Pei-ji;School of Physics,University of Ji'nan;;Study on magnetics and optical properties of transitionmetal doped SnO_2 superlattice[J];Journal of Functional Materials;2014-03
7 Nie Shanjun;Guo Jin;Shao Junfeng;Wang Tingfeng;Tang Wei;State Key Laboratory of Laser Interaction with Matter, Changchun Institute of Optics, Fine Mechanics and Physics,Chinese Academy of Sciences;Graduate University of Chinese Academy of Sciences;;Numerical Analysis on the Thermal-Deformation of Semiconductor Refrigerated Mirror[J];Acta Optica Sinica;2015-01
8 Zhaowei Wang;Baitao Zhang;Jian Ning;Xiaotong Zhang;Xiancui Su;Ruwei Zhao;State Key Laboratory of Crystal Materials, Institute of Crystal Materials,Shandong University;;High-peak-power passively Q-switched 1.3 μm Nd:YAG/V~(3+):YAG laser pumped by a pulsed laser diode[J];中国光学快报(英文版);2015-02
9 Wang Peng;Suet To;Hui Changshun;Tianjin Jinhang Institute of Technical Physics;State Key Laboratory in Ultra-precision Machining Technology, Department of Industrial and System Engineering,The Hong Kong Polytechnic University;;Improvement of the Diamond Turned Surface Texture by Bonnet Polishing Process[J];Acta Optica Sinica;2015-03
10 Bai Yang;Zhang Feng;Li Longxiang;Zheng Ligong;Zhang Xuejun;Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science;University of Chinese Academy of Sciences;;Manufacture of Silicon Modification Layer on Silicon Carbide Surface by Magnetorheological Finishing[J];Acta Optica Sinica;2015-03
【Secondary Citations】
Chinese Journal Full-text Database 10 Hits
1 SHENG Su~(1,2),FANG Guo-jia~1,YUAN Long-yan~1(1.Dept.of Phys.and Key Lab of Acoustic and Photonic Materials and Devices of Ministry of Education,Wuhan University, Wuhan 430072,China;2.Dept.of Phys.,Hubei Normal University,Huangshi 435002,China);Recent progress on p-type ZnO films[J];Materials Science and Technology;2006-06
2 ZHANG Fu-chun1,2,ZHANG Zhi-yong1,YAN Jun-feng1,ZHANG Wei-hu2(1.Department of Electronics,Northwest University,Xi’an 710069,China;2.College of Physics & Electronic Information,Yan'an University,Yan'an 716000,China);First-principles Calculation on Codoping Structure of p-type ZnO[J];Electronic Components and Materials;2006-05
3 ZHANG Jian-han,ZHANG Yu-min,HAN Jie-cai,HE Xiao-dong,YAO Wang(Center for Composite Materials,Harbin Institute of Technology,Harbin 150001,China);Design,fabrication and testing of space-borne SiC mirror[J];Optics and Precision Engineering;2006-02
4 ZHANG Ge,ZHAO Ru-cheng,ZHAO Wen-xing(Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China);Fabrication and test of large scale light-weight SiC miror[J];Optics and Precision Engineering;2006-05
5 GAO Ming-hui,LIU Lei,REN Jian-yue(Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Science,Changchun 130033,China);Characteristic test of SiC for space camera's mirror[J];Optics and Precision Engineering;2007-08
6 ZHANG Feng,XU Ling-di,FAN Di,GAO Jin-song,ZHANG Xue-jun(Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China);Fabrication of surface modification aspheric SiC mirror[J];Optics and Precision Engineering;2008-12
7 FAN Di, ZHANG Xuejun, ZHANG Zhongyu, NIU Haiyan, FENG Yuqin(Optical Technology Research Center, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun\ 130022, China);Optical surfacing of flat reaction-burned silicon carbide mirror[J];Optical Technique;2003-06
8 FAN Di, ZFANG Zhong-yu, NIU Hai-yan, FENG Yu-qin, ZHANG Xue-jun (Optical Technology Research Center, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun130022, China);Optical surfacing of spherical reaction-burned silicon carbide(RB-SiC) mirror[J];Optical Technique;2004-01
9 Feng Yan 1,2,Di Fan1,Binzhi Zhang1,Longhai Yin 1,Ruigang Li1,and Xuejun Zhang1 1 Optical Technology Research Center,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China 2 Graduate University of Chinese Academy of Sciences,Beijing 100049,China;Manufacturing and testing of a cubic SiC surface[J];中国光学快报(英文版);2009-06
10 Peng Xingping Yang Yinghu Song Chang′an Wang Yinyue (School of Physics Science and Technology, Lanzhou University, Lanzhou 73000);Preparation and Study of Properties of Indium-Doped ZnO Films on Si Substrates[J];Acta Optica Sinica;2004-11
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved