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《Transactions of Materials and Heat Treatment》 2010-07
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Influence of annealing temperature on properties of tantalum-doped indium tin oxide films

HUANG Jun-yi,FAN Guang-han,ZHANG Yong(Institute of Opto-electronic Materials and Technology,South China Normal University,Guangzhou 510631,China)  
Tantalum-doped indium tin oxide(ITO∶ Ta) thin films were deposited by the electron-beam evaporation technique with an ITO target containing 0.2 wt% tantalum.The effect of annealing temperature on surface morphology,sheet resistance,carrier concentration,hall mobility and transmittance of both ITO∶ Ta and ITO thin films was investigated in detail.The results show that ITO∶ Ta thin films exhibit a higher degree of crystallization and lower surface roughness with increasing annealing temperature.Reasonable annealing temperature can remarkably improve the electrical and optical properties of ITO∶ Ta thin films.ITO∶ Ta thin films annealed at 500 ℃ under O2 + N2 ambient have the best comprehensive properties,including a root mean square roughness of 2.17 nm,a sheet resistance of 10 ~ 20 Ω and a transmittance of 98.5% at 440 nm.
【Fund】: 粤港关键领域重点突破项目(2007A010501008);; 广东省教育部产学研结合项目(2009B09030038);; 教育部博士点基金项目(2007498351);;
【CateGory Index】: TB383.2;TG156.2
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