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《Transactions of Materials and Heat Treatment》 2013-08
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Preparation of SiC whisker by microwave sintering

HAO Bin1,LIU Jian1,LIU Jin-qiang1,WANG Fu2(1.Department of Environment and Chemical Engineering,Tangshan College,Tangshan 063000,China;2.High and New Technology Research and Transform Center of Tangshan of Academia Sinica,Tangshan 063000,China)  
Silicon carbide whiskers were synthesized by microwave heating carbothermic method using dried silica sol and active carbon as reactants under the condition of no adding any metal catalysts.The effects of heating temperature and time on products were studied.The results show that as the sintering temperature rises from 1300 ℃ to 1600 ℃ under the heating time of 30 min,the amount of β-SiC phase in the product increases.Different products are observed at different positions of the crucible.The products of dispersal SiC whisker and agglomerated SiC whisker at the top part and the center part of the crucible,and smooth surface SiO2 particles at the bottom of the crucible are obtained at the sintering temperature of 1500 ℃ for 30 min.Under the condition of heating temperature at 1600 ℃,the synthetic products are mainly composed of dispersal SiC whisker and equiaxial β-SiC particles at the top part and the center part of the crucible,and a mixture of whiskers and particles at the bottom of the crucible.It is found that higher yield and straight whiskers ratio can be obtained for synthesizing silicon carbon whiskers by microwave sintering at 1500 ℃ for 30 min.
【Fund】: 国家重点实验室开放课题项目(2011Z-05);; 唐山市科学技术研究与发展规划项目(11110210B-6-5)
【CateGory Index】: TQ174.1
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