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《Metallic Functional Materials》 2008-01
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Influence of Annealing on Properties of ZAO Films Prepared by Radio Frequency(RF) Magnetron Sputtering

WANG Dong-mei,LV Jun,XU Gaung-qing,WU Yu-cheng,ZHENG Zhi-xiang(School of Material Science and Engineering,Heifei University of Technology,Hefei 230009,China)  
Highly orientation ZAO thin films were deposited by radio frequency(RF) magnetron sputtering technique and the film was annealed at 400℃in argon atmosphere for an hour and two hours respectively,further annealed in air for an hour at the same temperature to the former.X-ray diffraction(XRD),scanning electron microscope(SEM),spectrophotometer and four-point probe were employed to characterize and analyze the films.The results show that annealing affects the structure,electrical and optical properties of ZAO films.The resistivity and visible transmittance of the as-deposited ZAO thin film is 2.59Ω·cm and 70% respectively.After annealed at 400℃ in pure argon atmosphere for an hour,the crystal size increases and the tensile stress decreases;the visible transmittance of the film increases from 70% to 80%,while the resistivity changes little,only decreased from 2.59Ω·cm to 1.37Ω·cm.After annealed at 400℃ in argon atmosphere for two hours or further annealed in air for an hour,the visible transmittance of the films is 75% and 80%,while the resistivity is 14.7Ω·cm and 0.69Ω·cm respectively.
【Fund】: 合肥工业大学中青年科技创新群体专项资助(103-037016)
【CateGory Index】: TN304.055
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