Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of Changzhou University(Natural Science Edition)》 2011-04
Add to Favorite Get Latest Update

Researth on Ohmic Contacts of Lightly N-Doped Si:H Thin Film

LI Jian-kai 1,YUAN Ning-yi 1,2,DING Jian-ning1,2(1.Center for Low-Dimensional Materials,Micro-Nano Devices and System,Changzhou University,Changzhou 213164,China;2.Jiangsu Key Laboratory for Solar Cell Materials and Technology,Changzhou University,Changzhou 213164,China)  
A set of samples with different crystallization rates of N-type lightly doped hydrogenated silicon films have been prepared by plasma enhanced chemical vapor deposition(PECVD).Hall test showed the samples are lightly doped.The I-U curve of thin film contact with aluminum has been tested.Result showed that they are good ohmic contacts.Band structure and optical band gap of the films were characterized by Raman spectrum and UV-visible absorption spectra.Analysis revealed that the unique band structure of thin films is an important reason for the formation of ohmic contact.
【Fund】: 国家高技术研究发展计划(2011AA050511);; 江苏省科技支撑项目(BY2010122)
【CateGory Index】: TQ320
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【Citations】
Chinese Journal Full-text Database 1 Hits
1 Dai Songyuan Wang Kongjia Wu Qingchong Wang Yu (Institute of Plasma Physics,Academia Sinica,Hefei 230031);INVESTIGATION OF NANOCRYSTALLINE PHOTOELECTROCHEMICAL CELL[J];ACTA ENERGIAE SOLARIS SINICA;1997-02
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 HAN Lin,LIU Xing-ming,LIU Li-tian(Institute of Microelectronics,Tsinghua University,Beijing 100084,CHN);a-Si Thin Film Transistor for Infrared Sensors[J];Semiconductor Optoelectronics;2006-04
2 ZHUO Jing-qing1,LI Hong-jian1,XIA Hui1,CUI Hao-yang2 (1.College of Physics Science and Technology,Central South University,Changsha 410083,CHN;2.Shanghai Institute for Technical Physics,Chinese Academy of Science,Shanghai 201805,CHN);Transport Characteristics of Light-emitting Devices with Metal/Porous Silicon/Silicon Structure[J];Semiconductor Optoelectronics;2008-04
3 YANG Li-xia,WU Zhi-ming,LI Shi-bin,JIANG Ya-dong,ZHU Kui-peng,LI Wei,LIAO Nai-man(Stat Key Lab.of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,CHN);Investigation on Resistance Instability of Boron-doped Amorphous Silicon Films[J];Semiconductor Optoelectronics;2008-05
4 XIA Zheng-hao1,2,3,LI Bing-qian2,ZHENG Tong-chang1,3,WANG Wei-guo3,ZHANG Yun-hua3(1. Institute of Optoelectronic Material and Technology,South China Normal University,Guangzhou 510631,CHN;2. Department of Physics,Foshan Institute of Science and Technology,Foshan 528000,CHN;3. Shenzhen Chengguangxing Industry Development Co.Ltd,Shenzhen 518100,CHN);Study on 0.5W Metal Framework Infrared LED[J];Semiconductor Optoelectronics;2009-05
5 LI Cheng1,2,LI Hao-sibaiyin1,LI Yao-yao1,2,WANG Kai1,2,GU Yi1,2,ZHANG Yong-gang1(1.State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,CHN;2.Postgraduate School,Chinese Academy of Sciences,Beijing 100039,CHN);Dark Current Characteristics of Double Heterojunction Wavelength Extended InGaAs PIN Photodetectors[J];Semiconductor Optoelectronics;2009-06
6 Gu Xiaochun1,Wu Sihan2 (1.The 55th Research Institute,CETC,Nanjing 210016,China;2.National Defence Science and Technology Message Research Centre,Beijing 100036,China);Relationship Between Resistance and Temperature of Microwave pin Diode[J];Semiconductor Technology;2008-12
7 Tang Kun,Gu Shulin,Zhu Shunming(Nanjing National Lab.of Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China);Growth and Electric Characteristics of p-Type N-Doped ZnO Film by Metal-Organic Chemical Vapor Deposition[J];Semiconductor Technology;2008-S1
8 Si Jianxiao1,2,Wu Huizhen1,Weng Binbin1,He Zhan1,Cai Chunfeng1(1.Laboratory of Physics for Solid State Optoelectronic Materials and Devices,Physics Department of Science,Zhejiang University,Hangzhou 310027,China;2.College of Physics and Mathematics,Zhejiang Normal University,Jinhua 321004,China);Research on PbTe/Pb_(1-x)Sr_xTe Multi-Quantum Well Mid-Infrared Light Emitting Device[J];Semiconductor Technology;2008-S1
9 Zhao Lixia1,2,Yuan zhaogeng1,Zhang Heming2 (1.Hebei Poshing Electronics Technology Co.,Ltd.,Shijiazhuang 050200,China;2.School of Microelectronics,Xidian University,Xi'an 710071,China);Design of EPI Parameter for High Voltage VDMOS[J];Semiconductor Technology;2009-04
10 Xiong Hai1,2,Kong Xuedong2,Zhang Xiaowen2(1.Material Department of Guangdong University of Technology,Guangdong 510006,China 2.The 5th ElectronicResearch Institute of China Ministry of Information Industry,Guangzhou 510610,China);Application of High Frequency Capacitance-Voltage Characterization of MOS Struture[J];Semiconductor Technology;2010-01
China Proceedings of conference Full-text Database 3 Hits
1 FENG Changqing LIU Shubin WANG Jinhong An Qi (Detector Technology and Nuclear Electronics Lab,Department of Modern Physics, University of Science and technology of China,Hefei 230026,China);Temperature Compensation for Charge Measurement of BESⅢ TOF Electronics[A];[C];2008
2 Zhao mingli Yan Guo-guo Yang shi-e (The college of Physics engineering,Zhengzhou university,Zhengzhou 450001,Henan);Computer simulation of microcrystalline silicon thin film solar cell[A];[C];2008
3 Qi Ling~(1,2),En Yun-fei~2,Zhang Xiao-wen~2 (1.Guangdong University of Technology,Guangzhou 510075,China; 2.CEPREI,Guangzhou 510610,China);Research of MOSFET Carrier Mobility relate with the Temperature Range[A];[C];2008
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved