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《Acta Metallurgica Sinica》 2006-04
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EFFECT OF SiC_p REINFORCEMENT ON GROWTH OF MICROARC OXIDATION FILM ON ALUMINUM MATRIX COMPOSITE

XUE Wenbin Key Laboratory of Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875  
A thick ceramic film on SiCp/2024 Al composite was fabricated by plasma microarc discharge method. The growing curve of film was determined, and the morphology and phase constitution of film were analyzed by scanning electron microscopy and X-ray diffraction. The morphology and distribution of reinforcement particles were emphatically observed, and then a growth model of microarc oxidation film on metal matrix composites was proposed. It is shown that under microarc discharge sintering, most SiC particles (SiCp) have been oxidized, but only a few residual SiCp still remain in the film near the composite/film interface. Although the SiCp hinder the film growth, the continuity of film has not been disrupted, which is completely different from the conventional anodizing on aluminum matrix composites.
【Fund】: 国家自然科学基金项目59801003;; 北京市科技新星计划项目9558102500;; 北京市留学回国启动基金项目资助
【CateGory Index】: TB331
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