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《Chinese Journal of Quantum Electronics》 2002-05
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Doping of Zn into InP Induced by YAG Continuous Wave Laser

Cai Zhihun, Tian Hongtao, Chen Chao. Zhou Haiguang, Sun Shunong( Department of Physics, Xiamen University, Xiamen 361005 China )Pavel K. Kashkarov( Department of Physics, Moscow University, R.ussia 119899 China)  
Nd:YAG continuous laser was used to irradiate the n-InP substrates which wore vapoured Zn film on the samples surface. The doping of Zn into InP was achieved by the method of Nd: YAG continuous laser inducing doping, and the PN junctions were obtained. The samples, which were irradiated, were studied with an Electrochemical C-V profiler and Scanning Electron Microscope (SEM). The relation of performance parameters of PN junctions such as the depth of the junctions, the distribution of the doping concentration and the irradiation time, the irradiation power are presented . The experimental results show that the acceptor concentration of uniform distribution, shallow junction (-1 μm), and heavy doping concentration is attained (-1019cm-3). The primary mechanism of Zn doping is assumed that alloy junctions came to being with the laser irradiating.
【Fund】: 本工作获得国家自然科学基金高科技探索项目(基金批号69887002);; 教育部与莫斯科大学合作项目的资助
【CateGory Index】: TN249
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