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《Microelectronics》 2005-01
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Applications of SOI in RF Circuits

LUO Su-hua, LIU Wei-li, ZHANG Miao, DI Zeng-feng, WANG Shi-ye, SONG Zhi-tang, SUN Xiao-wei, LIN Cheng-lu ( Research Center of Semiconductor Function Film Engineering Technology; RFIC & MMIC Lab, Shanghai Institute of Micro-System & Information Technology, The Chinese Academy of Sciences, Shanghai 200050, P. R. China)  
With the improvement of the operation frequency and integration of radio frequency circuits, the impact of the substrate on the circuit performance is becoming more and more serious. With its smart structure, SOI offers additional design advantages over bulk CMOS technology due to its excellent electrical property. The compatibility with CMOS process makes it possible to incorporate digital and analog circuits on a single chip. Challenges encountered in the development of RF circuits are analyzed, as well as the advantages of SOI in RF applications. The state-of-the-art of SOI for RF IC's is reviewed.
【Fund】: 上海市纳米技术专项资助项目(052nm084) 国家重点基础研究发展计划资助项目(G2000036506) 国家自然科学基金资助项目(90101012)
【CateGory Index】: TN431
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Chinese Journal Full-text Database 7 Hits
1 YIN Xue-song,JIANG Fan,LIU Zhong-li (Microelectronics R & D Center, Institute of Semiconductor, CAS, Beijing 100083,China);Research on PD SOI CMOS Analog Circuit Design[J];Semiconductor Technology;2005-04
2 LUO Hao-ping(The 58th research institute of CETC,Wuxi 214035,China);The SOI Devices and Applications[J];Electronics & Packaging;2007-07
3 YUN Zhen-xin (State Owned No.970 Factory, Chengdu 610051, China);RF SOI CMOS Technology and Its Applications[J];Electronic Components $ Materials;2003-07
4 ZHU Ming 1 ,LIN Cheng -lu 1,XING Kun -shan 2 (1.State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem a nd Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;2.The Institute No.214of China Or;Development of floating body effect in SOI MOSFET's[J];Journal of Functional Materials and Devices;2002-03
5 PENG Li,HONG Gen-shen(IC Technology Lab,Wuxi Microelectronics Research Institute, Wuxi,Jiangsu 214035,P.R.China);Floating Body Effects in Partially Depleted SOI MOSFET's[J];Microelectronics;2005-06
6 TIAN Liang1,CHEN Lei1,ZHOU Jin1,HUANG Aibo1,LAI Zongsheng1,2(1.Institute of Microelectronic Circuit and System,East China Normal University,Shanghai 200062,P. R. China;2.Engineering Research Center for Nanophotonics & Advanced Instrument,Ministry of Education,East China Normal University,Shanghai 200062,P. R. China);Investigation into Low Insertion-Loss & High Isolation SOI RF Switch[J];Microelectronics;2009-05
7 GU Mei-liang,HU Ming(School of Electronic Information Engineering,Tianjin 300072,China);New progress and Applications in SOI Technology[J];Piezoelectrics & Acoustooptics;2006-02
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