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《Microelectronics》 2006-04
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Effects of Via on Temperature Distribution of Metal Wires

PEI Song-wei,HUANG He,HE Xu-shu,BAO Su-su(School of Computer,South China Normal University,Guangzhou,Guangdong 510631,P.R.China)  
An analytical thermal model considering via self-heating is presented for estimating the temperature of metal wires.Using this model,effects of via diameter and via height on both single and parallel lines are calculated.It has been shown that via diameter,via height or thermal coupling has significant effects on the temperature distribution of metal wires.
【Fund】: 国家自然科学基金资助项目(60076013)
【CateGory Index】: TN47
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【Citations】
Chinese Journal Full-text Database 1 Hits
1 Wang Nailong and Zhou Runde(Institute of Microelectronics,Tsinghua University,Beijing 100084,China);A Novel Analytical Thermal Model for Temperature Estimation of Multilevel ULSI Interconnects[J];Chinese Journal of Semiconductors;2004-11
【Co-citations】
Chinese Journal Full-text Database 2 Hits
1 HE Xu-shu,HUANG He,PEI Song-wei,BAO Su-su(School of Computer,South China Normal University,Guangzhou 510631,China);THERMAL ANALYSIS OF MULTILEVEL METAL ROUTING IN 0.1 μm ULSI TECHNOLOGY[J];Journal of South China Normal University(Natural Science Edition);2006-03
2 PEI Song-wei, HUANG He, HE Xu-shu, BAO Su-su (School of Computer, South China Normal University, Guangzhou 510631, China);Analysis of Hot Spots in ULSI Interconnect and Via Systems[J];Microelectronics & Computer;2007-04
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 LIANG Jing, HUANG Rong\|xu\+1, ZHENG Guo\|xiang, LIN Jian\+1, PANG Hai\|zhou\+1 and ZONG Xiang\|fu(Department of Materials Science, Fudan University,Shanghai\ 200433, China) (1\ Advanced Semiconductor Manufacturing Corp.,Shanghai\ 200233, China)Receiv;Technological Investigation of Contact Hole Filling and Aluminum Metallization Process in Sub\|Micron IC Devices[J];CHINESE JOURNAL OF SEMICONDUCTORS;2000-06
2 RUAN Gang 1 and XIAO Xia 2 (1 ASIC and System State Key Laboratory,Fudan University,Shanghai 200433,China) (2 Center of Microtechnology,Technical University of Chemnitz,Chemnitz D-09107 ,Germany);Simulation of Thermal Performance of ULSI Inte rconnect System[J];Chinese Journal of Semiconductors;2001-08
3 ZHANG Guo-hai 1,QIAN He 1,XIA Yang 1,WANG Wen-quan 1 and LONG Shi-bin g 2 (1 Microelectronics R&D Center,The Chinese Academy of Sciences,Beijing 100029, China) (2 Beijing University of Science and Technology,Beijing 100083,China);Electroplating Technology for Copper Interconn ection in ULSI[J];Chinese Journal of Semiconductors;2001-08
4 Wang Yangyuan and Kang Jinfeng(Institute of Microelectronics,Peking University,Beijing 100871,China);Development of ULSI Interconnect Integration Technology--Copper Interconnect with Low k Dielectrics[J];Chinese Journal of Semiconductors;2002-11
5 Wang Nailong and Zhou Runde(Institute of Microelectronics,Tsinghua University,Beijing 100084,China);A Novel Analytical Thermal Model for Temperature Estimation of Multilevel ULSI Interconnects[J];Chinese Journal of Semiconductors;2004-11
6 Xiao Xia~ 1, ,Yao Suying~1,and Ruan Gang~2(1 Center of ASIC,School of Electronic and Information Engineering,Tianjin University,Tianjin 300072,China)(2 School of Information Science and Engineering,Fudan University,Shanghai 200433,China);Influence of Interconnection Configuration on Thermal Dissipation of ULSI Interconnect Systems[J];Chinese Journal of Semiconductors;2006-03
7 LIU Yan hong,\ ZHAO Yu,\ WANG Mei tian,\ HU Li zhong,\ WEI Xi wen (Dept.of Phys.,Dalian Univ.of Technol.,China);Physics 、structure and technology of the deep submicron MOS devices[J];;2000-01
8 LI Zhi-guo,LU Zhen-jun (The School of Electronics and Control Engineering,Beijing Polytechnic University,Beijing 100022,China);Numerical Simulation of Electric and Thermal Characteristic in ULSI Copper-Filled Inteconnect Via Hole[J];Acta Electronica Sinica;2003-07
9 HE Xu-shu,HUANG He,PEI Song-wei,BAO Su-su(School of Computer,South China Normal University,Guangzhou 510631,China);THERMAL ANALYSIS OF MULTILEVEL METAL ROUTING IN 0.1 μm ULSI TECHNOLOGY[J];Journal of South China Normal University(Natural Science Edition);2006-03
10 Mem ber of The C A S, Professor W A N G Yangyuan Professor Z H A N G Xing( Institute of Microelectronics , Beijing University , Beijing 100871));Microelectronics Technology in The 21st Century[J];WORLD SCI-TECH R & D;1999-04
【Secondary Citations】
Chinese Journal Full-text Database 1 Hits
1 Wang Nailong,Dai Hongyu and Zhou RundeProject supported by National Natural Science Foundation of China (No.59995550 1) Wang Nailong male,was born in 1977,PhD candidate.His research interests are low power CMOS circuit design and electrothermal simulation. Dai Hongyu male,was born in 1975,PhD candidate.His research interests are low power CMOS circuit design and embedded system design. Zhou Runde male,was born in 1945,professor and advisor for PhD candidates.His research interests are low power IC design and embedded system structure. Received 1 June 2002,revised manuscript received 4 November 2002○c 2003 The Chinese Institute of Electronics(Institute of Microelectronics,Tsinghua University,Beijing 100084,China);VLSI Thermal Placement Optimization Using Simulated Annealing[J];Chinese Journal of Semiconductors;2003-04
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