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《Journal of Inner Mongolia University of Technology(Natural Science)》 2009-03
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THE RESEARCH OF CURIE TEMPERATURE FOR GaAs DOPED WITH 3d TRANSITION METAL

CHEN Yu,GUAN Yu-qin(School of Science,Inner Mongolia Universityof Technology,Hohhot 010051,China)  
Based on Zener model,a theoretical calculation of curie temperature for GaAs doped with 3d transition metal(TM=Sc,Ti,V,Cr,Mn,Fe,Co,Ni) has been made.A detailed introduction is given to the crystal structure and basic parameters of GaAs materials.For calculating Curie temperature,a function expression is deduced.Curie temperature of GaAs doped with different element of different concentration is calculated.A conclusion is drawn as follows:when Ga is partially replaced by 3d transition metal,Curie temperature of(GaTM) As appears higher when Cr or Mn is doped instead of other elements.In this case,room temperature ferromagnetism can be achieved.However,when As is partially replaced by 3d transition metal,Curie temperature of all the Ga(AsTM) materials,except when V or Ni is doped,gets high enough for room temperature ferromagnetism to be achieved.Curie temperature of the complex DMS material is generally higher when As is replaced than when Ga is replaced.
【Fund】: 国家自然科学基金资助项目(10862002);; 内蒙古工业大学校基金X200930
【CateGory Index】: O472.5
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