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《Nanotechnology and Precision Engineering》 2007-04
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Preparation and Characterization of Pb(Zr_xTi_(1-x))O_3 Thin Film on Indium Tin Oxide

LIU Shuang,WU Ya-lei,XU Xiao-hui,WEN Li,HUANG Wen-hao, CHU Jia-ru(Department of Precision Machinery and Precision Instrumentation,University of Science and Technology of China,Hefei 230026,China)  
Pb(ZrxTi1x)O3(PZT) lead zirconate titanate thin films were prepared and characterized on indium tin oxide(ITO) by sol-gel process.Crystal orientation of the film was improved by rapid thermal annealing process,and analyzed by X-ray diffraction.Also electrical properties of thin films were tested using the principle of Sawyer-Tower circuit based on Al/PZT/ITO and ITO/PZT/ITO capacitance structure respectively.The testing result shows that PZT thin films with the perovskite structure(110) oriention can be prepared on ITO,the relative dielectric constant of the film,as high as 1 000,was measured;strengths of remnant polarization and coercive fields of the film reached 15.2 uc/cm2 and 70.8 kV/cm respectively.Using the TF Analyzer 2000,the fatigue properties of the PZT thin film on ITO were tested,and remnant polarization strength decreased only by 15% after 108 cycles.It is concluded that transparent conductive oxide thin film ITO prepared by magnetron sputtering can be served as the electrodes of PZT thin film.
【Fund】: 国家自然科学基金资助项目(50605061)
【CateGory Index】: TN304.9
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