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《Journal of Inner Mongolia Normal University(Natural Science Edition)》 2008-05
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Optical and Electrical Properties of ITO Thin Films Prepared by the Sol-Gel Method

PAN Hong-tao,ZHOU Bing-qing,CHEN Xia,LI Li-meng(College of Physics and Electron Information,Inner Mongolia Normal University,Huhhot 010022,China)  
Using InCl3·4H2O and SnCl4·5H2O as raw materials,ITO transparent thin films were prepared on common glass substrate by the sol-gel spin-coating process.The effects of heat-treatment temperature and time,and Sn dopant content on the optical and electrical properties of ITO thin films were investigated by UV-Vis transmission spectra and four-probe electrical measurement.The electrical and optical measurement results indicate that the best processing conditions are Sn dopant content being 11%,heat-treatment temperature being 480 ℃,heat-treatment time being 60 min.Under these conditions,the average visible transmittance of the ITO film is about 82% and the sheet resistance is about 390 Ω/□.
【Fund】: 国家自然科学基金资助项目(50662003);; 内蒙古师范大学研究生基金资助项目(YJS06045)
【CateGory Index】: O484.4
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