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Growth of AgGaSe_2 Single Crystal by the Descending Crucible with Rotation Technique

Zhao Beijun Zhu Shifu Li Zhenghui Fu Shishen Yu Fengliang Li Qifeng (Department of Materials,Sichuan University,Chengdu,610064,China) (Received 19 August 1999)  
A new procedure of polycrystalline synthesis and single crystal growth on AgGaSe 2 —— melt temperature oscillation and descending crucible with rotation method was reported in this paper.A single phase and high mass density AgGaSe 2 was synthesized from the high pure elements of Ag,Ga,Se at 1100℃.The original charges were rich in selenium 0.5% with respect to stoichiometric composition and the temperature oscillations were carried out close by the melt point.The crack free single crystal of AgGaSe 2 22mm in diameter and 80mm high has been grown using the polycrystalline materials by the descending crucible with rotation.The infrared transmission of the crystal is 62.4% at 10.6μm,and the absorption coefficient is lower than that of 0.01 cm -1 .Using the crystal for second harmonic generation of 10.6μm CO 2 pulsed laser output,a 12% harmonic energy conversion efficiency was obtained.
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