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《Journal of Synthetic Crystals》 2009-04
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Study on Etch Pits Morphology on the(112)Face of AgGaS_2 Crystals

YANG Sheng-wei,ZHU Shi-fu,ZHAO Bei-jun,CHEN Bao-jun,YUAN Ze-rui,FAN Long(Department of Materials Science,Sichuan University,Chengdu 610064,China)  
A new etchant which is able to selectively etch(112)faces of AgGaS2 crystals at room temperature was reported.The SEM observation shows that the etch pits on the(112)face of AgGaS2 exhibit a triangular pyramidal shape.The formation of the etch pit pattern was analyzed preliminarily.The electrochemical inhomogeneity of the specimen is the factor which cause the etching.The {100} planes with lower etching rate will gradually appear,and the(112) faces of AgGaS2 crystal exhibit a triangular pyramidal shape eventually.
【CateGory Index】: O77
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