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《Journal of Synthetic Crystals》 2009-05
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Effects of Heating Treatments of CeO_2 Buffer Layers on Superconducting Properties of Tl-2212 Films

XIE Qing-lian1,2,YOU Feng2,HUANG Guo-hua1,LI Jian-Ying1,ZUO Tao3,HE Ming2,JI Lu2,ZHANG Yu-ting2,ZHAO Xin-jie2,FANG Lan2,YAN Shao-lin2 (1.College of Physics and Electronic Engineering,Guangxi Teachers Education University,Nanning 530001,China;2.College of Information Technical Science,Nankai University,Tianjin 300071,China;3.China Electronnics Technology Group Corporation No.16 Research Institute,Hefei 230043,China)  
The effect of high temperature treatment on the surface morphology,the phase structure of CeO2 buffer layers grown on sapphire substrates was studied,and also the growth of CeO2 on Tl-2212 films. The measurements of AFM and XRD showed that annealing of the CeO2 films produced drastic change in surface morphology and crystalline quality. Annealing treatment at 950 ℃ for 1 h resulted in atomically flat CeO2 surface and significant improvement of the crystalline quality of CeO2 films. Experimental results revealed that the superconductivity of Tl-2212 films is closely interconnected with the crystal quality and morphology of buffer layers. The crack-free films with the thickness of 500 nm grown on such buffer layers had a high transition temperature (Tc =107 K),a high critical current density (Jc=3.9 MA/cm2 at 77 K and zero applied magnetic field) and a low surface resistance (Rs=281 μΩ at 10 GHz and 77 K).
【Fund】: 国家重点基础研究发展计划(973)项目(No.2006CB601006);; 国家高技术研究发展计划(863)(No.2006AA03Z213);; 广西高校优秀人才资助计划项目(No.RC2007024)
【CateGory Index】: O484.1
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