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《Applied Chemical Industry》 2013-04
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Properties of ITO films prepared by DC magnetron sputtering

ZHAO Ya-li,MA Fu-hua,Lü De-tao,LI Ke-xun(NO.33 Research Institute of China Electronics Technology Group Corporation,Taiyuan 030006,China)  
The high quality ITO films were prepared by different temperature by DC magnetron sputtering.The result show that oxygen partial pressure and substrate have an important influence on the transmission in visible range and sheet resistivity.The optimal oxygen partial pressure is 0.5/50,while the optimal substrate temperature is 350 ℃.The film conductivity is improved by increasing the film thickness and the size of film particle.
【Fund】: 山西省青年科技研究基金(2012021020-4)
【CateGory Index】: TB383.2;O614.372
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