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《Journal of Shenyang University of Technology》 2009-02
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Growth mechanism of Si_3N_4 powder prepared by self-propagating high-temperature synthesis

QIAO Rui-qing,WANG Fang-wen(School of Materials Science and Engineering,Shenyang University of Technology,Shenyang 110178,China)  
The reaction speed during self-propagating high-temperature synthesis(SHS) of Si3N4 powder is too fast to be controlled,so that the growth mechanism of Si3N4 powder prepared by SHS is obscure.In order to clarify the growth mechanism of Si3N4 powder by SHS and the formation causes of some grains with particular shape,the growth course of α-Si3N4 and β-Si3N4 was investigated by cumulative experiment and the morphology of the powder was observed using SEM.The results reveal that the limited growth of the grains is realized after reaching the balance in growth and decomposition of the grains.The wavy and concave grains form under the combined action of similar liquid phase and solid phase sintering.The crotch-like grains results from both the growth of β-Si3N4 on the seed crystal and liquid phase sintering.The reasonable control of diluent ratio and the decrease of reaction temperature can reduce the grain size of Si3N4 powder prepared by SHS and impede the abnormal growth of Si3N4 grains.
【CateGory Index】: TB383.3
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