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《Acta Energiae Solaris Sinica》 2001-03
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STUDY ON RELATIONSHIP BETWEEN THE PROPERTIES OF FLEXIBLE ITO FILMS AND FABRICATING PARAMETERS

Yang Zhiwei 1,Han Shenghao 1,Yang Tianlin 2,Ye Lina 1,Ma Honglei 1,Han Xigui 3 (1 physics Department of Shandong University,Jinan 250100,China;2.Zibo University,Zibo 255091,China; 3.Optoelectronic Materials and Devices Institute of Shandong Unive  
Good adherent ITO(10% SnO 2 impurity w.t.)films with a transmittance of about 80% in visible range and resistivity as low as 6.3×10 -4 Ωcm,were deposited on water cooled PPA(Polypropylene adipate)substrate by bias r.f.magnetron sputtering.The grain sizes,as well as the conductivities of the films have the maximum value indicated by both AFM microscopy and XRD pattern in the range of -40V of the bias applied to the substrate.The Hall mobility of the sample with maximum grain size has the maximum value indicated by the Hall measurement.Density of the oxygen vacancies increases with increasing the negative bias due to the bombardment of the cations attracted by the bias,and the carrier density increases with increase of the negative bias.The transmittance in wavelength range of 300~550nm of these films were found increase with the negative bias applied to the substrate.All these films have a preferred orientation of .The X ray diffraction peaks of decrease with increasing the negative bias of the substrate,which means the amount of crystal grain growing alongdecreases.
【CateGory Index】: TB43
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