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《Acta Energiae Solaris Sinica》 2015-06
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PREPERATION AND PERFORMANCE STUDY OF Cd S THIN FILM DOPED BY RARE EARTH ELEMENT(Gd,Y)

Zou Kai;Li Rongping;Liu Yongsheng;Feng Song;Tian Lei;School of Physical Science and Technology,Inner Mongolia University;Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region;  
Two layers of pure CdS thin films were twice deposited by chemical bath deposition(CBD).The introduction of rare earth layer between two layers of CdS was deposited by the electron beam evaporation method,then CdS/Gd(Y)/CdS multilayer films with different thickness rare earth Gd(Y) layer were prepared.The structure,superficial topography,component,optical and electrical properties of the CdS samples were characterized by XRD,SEM,EDX,UV- VIS and Hall Effect measurements.The results show that pure CdS thin films are cubic blende structure and preferentially orient in(111)directions.Its conductive type is n type.CdS thin films doped by rare earth element Gd(Y)are a mixed structure of cubic and hexagonal phase,and the conductive type is still n type.The uniformity and compactness of the films are improved.At the same time,the proportion of Cd and S atoms in films doped by rare earth element are more close to the stoichiometric ratio of CdS.Rare earth doping can also make the transmittance in the visible region increase and result in an obvious improvement of the electrical properties,such as lower resistivity and higher carrier concentration.
【Fund】: 内蒙古自治区教育厅项目(NJ09006)
【CateGory Index】: O484.1
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