THE INVESTIGATION OF DOPING CHARACTERISTIC IN P TYPE μc-SiC:H WINDOW MATERIALS
Geng Xing-huo; Sun Yun; Liu Shi-guo; Li Hong-bo;Lu Jing-gu; Sun Lion; Xu Wen-Yuon(Institute of Photoelectron Nankai University, Tianjin 300071)
rystallization of boron-doped silicon carbon alloy thin film materials has been prepared at low substrate temperature(M170℃)and small rf-power (60mWcm-2) by plasma glow discharged method. A p-type microcrystallized silicon carbon alloy (μcSiC:B:H) thin films with high dark conductivity (σ￣0.2cm-1) and optical band gap Eopt ￣2.2eV were obtained. The key of crystallization is the control of H2 diluting ratio and doping level. In this paper. the results on tile detailed investigation of the doping effect, photoelectronic characteristics and the influence of doping level on the structure of these materials are reported.