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THE INFLUENCE OF THE CONTACT CHARACTERISTIC OF SnO_2/P ON THE FILL FACTOR OF SOLAR CELLS

Geng Xinhua;Liu Shiguo;Li Hongbo;Sun Yun;Sun Zhonglin; Xu Wenyuan(Nankai University, Tianjin 300071)  
High conductivity (~0.2scm-1) and wide band gap (~2.2eV) p-type microcrystalized silicon-carbide alloy (p-μ c-SiC:H) thin films were fabricated by PECVD method. The p-μc-SiC:H/p-a-SiC: H structure as window layer of solar cells improved obviously the contact characteristics of SnO2/P. Purthermore. the fill factor of single junction integrated solar cells with area of 10cm×10cm increased from below 0.70to 0.72.
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