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《Acta Physica Sinica》 2002-01
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Analysis of self-heating effect on 4H-SiC RF power MESFETs

Yang Lin An\ Zhang Yi Men\ Gong Ren\|Xi\ Zhang Yu Ming (Microelectronics Institute, Xidian University ,Xi'an\ 710071, China)  
A large signal analytical model with temperature considered for 4H SiC radio frequency power MESFET I V characteristics is proposed based on the theory of saturated carrier velocity, by means of which the self heating effect is taken into account so as to analyze the temperature performance of SiC power MESFET. The heat transport between the channel and the substrate is modeled with non constant temperature T 0 at the bottom of 4H SiC substrate in order to fit the real actions of devices. A good agreement between simulation and measurement is obtained.
【Fund】: 国防预研基金 (批准号 :8 1 7 3)资助的课题~~
【CateGory Index】: O472.4
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