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《Acta Physica Sinica》 2002-04
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Analysis of the effect of interface state charges on threshold voltage and transconductance of 6H-SiC N-channel MOSFET

Tang Xiao Yan Zhang Yi Men Zhang Yu Ming (Institute of Microelectronics, Xidian University, Xi'an 710071, China)  
The effect of interface state charges on the threshold voltage and transconductance of 6H SiC N channel metal oxide semiconductor field effact transistor (MOSFET) is analyzed based on the nonuniformly distributed interface state density in the band gap and incomplete impurity ionization in silicon carbide.The results show that the nonuniform distribution of interface state density causes not only the increment of the threshold voltage but also the degradation of the transconductance of MOSFET so that it is one of the important factors to influence the characteristics of SiC MOSFET.
【Fund】: 国防科技预研基金项目 (批准号 :OOJ11 2 1 DZ0 1)~~
【CateGory Index】: O472.1
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【References】
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1 SHANG YE-CHUN ZHANG YI-MEN ZHANG YU-MING (Microelectronics Institute,Xidian University,Xi'an\ 710071,China);MONTE CARLO STUDY ON INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON MOBILITY IN 6H-SiC INVERSION LAYERS[J];Acta Physica Sinica;2001-07
【Co-citations】
Chinese Journal Full-text Database 6 Hits
1 GAO Jin-xia,ZHANG Yi-men,ZHANG Yu-ming,TANG Xiao-yan(Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi′an 710071,China);Subthreshold characteristics for SiC buried-channel MOSFETs based on an equivalent channel thickness model[J];Journal of Functional Materials and Devices;2006-02
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【Co-references】
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1 SHANG Ye chun, ZHANG Yi\|men and ZHANG Yu\|ming(Microelectronics Institute, Xidian University, Xi'an 710071, China)Received 22 October 1998, revised manuscript received 16 April 1999;A Model of Minority Carrier Lifetime Degradation in SiC Irradiated by Electron[J];CHINESE JOURNAL OF SEMICONDUCTORS;2000-02
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