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《Acta Physica Sinica》 2004-03
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Optimizing boron implantation dose of HgCdTe infrared detectors

Chen Gui-Bin 1)2) Lu Wei 1) Cai Wei-Ying 1) Li Zhi-Feng 1) Chen Xiao-Shuang 1) Hu Xiao-Ning 1) He Li 1) Shen Xue-Chu 1) 1)(State Key Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China) 2)(Joint Open Laboratory for Ion Beam,Shanghai Institute of Microsystem and Information Techniques,Chinese Academy of Sciences, Shanghai 200050,China)  
Using the material chip technology,large area photodiodes of n-on-p structure with different boron implantation dose are fabricated on the Hg 1-xCd xTe film for mid-infrared wavelength region(x=0.291).Current-voltage characteristics of the photodiodes are measured at 77K and zero bias resistance-area products of different photodiodes are fitted from the data in the voltage range of -0.2—0.08V.The study indicated that the R 0A products of different elements depended distinctly upon the implanted boron dose.A large R 0 value has also obtained in another chip with x=0.2743.All the samples in this study are grown by Riber 32P molecular-beam epitaxy system and all the junctions-forming process is same to the standard planar technology but using a series of metallic masks during the boron ion implantation.
【Fund】: 国家自然科学基金 (批准号 :10 0 740 68和 60 2 44 0 0 2 );; 国家重点基础研究项目 (批准号 :G19980 614 0 4)资助的课题~~
【CateGory Index】: TH74
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1 Tang Dong-Hua Xue Lin Sun Li-Zhong~+ Zhong Jian-Xin 1)(Laboratory for Quantum Engineering and Micro-Nano Energy Technology Xiangtan 411105,China) 2)(Faculty of Materials,Optoelectronics and Physics of Xiangtan University,Xiangtan 411105,China);Doping effect of boron in Hg_(0.75)Cd_(0.25)Te:first-principles study[J];物理学报;2012-02
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4 Chen Gui-Bin 1)2) Lu Wei 1) Cai Wei-Ying 1) Li Zhi-Feng 1) Chen Xiao-Shuang 1) Hu Xiao-Ning 1) He Li 1) Shen Xue-Chu 1) 1)(State Key Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China) 2)(Joint Open Laboratory for Ion Beam,Shanghai Institute of Microsystem and Information Techniques,Chinese Academy of Sciences, Shanghai 200050,China);Optimizing boron implantation dose of HgCdTe infrared detectors[J];物理学报;2004-03
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Chinese Journal Full-text Database 10 Hits
1 Han Jin-Liang 1) Sun Li-Zhong 1) 2) Chen Xiao-Shuang 2) Lu Wei 2) Zhong Jian-Xin 1) 1)(Institute for Quantum Engineering and Micro-Nano Energy Technology,School of Materials and Phoelectronic Physics,Xiangtan University,Xiangtan 411105,China)2)(National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China);First-principles study of gold p-type doping in Hg_(1-x)Cd_xTe[J];物理学报;2010-02
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4 Duan He Chen Xiao-Shuang Sun Li-Zhong Zhou Xiao-Hao Lu Wei(National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China);First-principle calculations of structural properties and effective-mass of zinc-blende ZnTe and CdTe[J];物理学报;2005-11
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