Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Acta Physica Sinica》 2006-06
Add to Favorite Get Latest Update

Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET

Gao Jin-Xia Zhang Yi-Men Tang Xiao-Yan Zhang Yu-Ming(Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China  
A theoretical and experimental study on extracting channel carrier concentration for 4H-SiC buried channel MOSFET has been carried out. The distortion of C-V curve caused by the existence of p-n junction in buried channel MOS structure would affect the extracting result, and the interface states on SiO-2/SiC- interface make extracting result deviate from true channel carrier concentration. In this paper, firstly, a theoretical analysis about the effects of channel depth and interface state on extracting result is made. Then the C-V curves for buried-channel MOS structure with two different channel depth are presented from which the channel carrier concentration is extracted. In the measurement of C-V curves, three different sweep velocities are used to analyze the effect of interface states. The theoretical results agree with experimental results.
【Fund】: 国家重点基础研究发展计划(973)(批准号:A50103250091)资助的课题~~
【CateGory Index】: O471
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved