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《Acta Physica Sinica》 2007-08
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Analytical calculation of temperature distribution and thermal deformation during doping of Zn in GaN/Al_2O_3 material induced by nanosecond pulse-width laser

Huang Sheng-Rong Chen Chao(Department of Physics,Xiamen University,Xiamen 361005,China)  
The process of doping of Zn into GaN induced by nanosecond pulse laser is analyzed in this paper.An analytical formula of temperature distribution in GaN material irradiated by pulsed laser is presented using one-dimensional model.The relation of surface temperature versus irradiation time and thermal deformation versus depth are obtained.The results show that the surface temperature is in proportion to the square root of irradiation time.The distributions of temperature and thermal deformation in the material are also obtained.The temperature gradiant and the thermal deformation are all highest near the surface.However,the temperature of surface increases in a saw-tooth manner when the material is irradiated continuously by pulseed laser.
【Fund】: 国家自然科学基金(批准号:60476022);; 国家高技术研究发展计划(批准号:2004AA311020)资助的课题.~~
【CateGory Index】: TN249;TN304
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