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《Acta Physica Sinica》 2008-07
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Structural study of Mn_xSi_(1-x) magnetic semiconductor thin films

Ren Peng Liu Zhong-Liang Ye Jian Jiang Yong Liu Jin-Feng Sun Yu Xu Peng-ShouSun Zhi-Hu Pan Zhi-Yun Yan Wen-Sheng Wei Shi-Qiang (National Synchrotron Radiation Laboratory,University of Science & Technology of China,Hefei 230029,China)  
The structure of MnxSi 1-x magnetic semiconductor thin films prepared by molecular beam epitaxy(MBE) on Si(100) substrate at 600 ℃ has been studied by X-ray diffraction (XRD) and X-ray absorption near edge structure (XANES) technique. The XRD results show that in the MnxSi 1-x thin films with high Mn doping concentrations (x=0.08 and 0.17),only diffraction peaks of crystalline Mn4Si7 are observed. XANES results indicate that all the Mn K-edge XANES spectra of MnxSi 1-x thin films with different Mn doping concentrations (x = 0.007,0.03,0.08 and 0.17) show the similar feature. XANES calculation based on multiple-scattering theory further reveals that the experimental spectra for samples with different Mn doping concentrations are reproduced by the calculated Mn4Si7 spectrum. These results reveal that for the MnxSi 1-x magnetic semiconductor thin films,Mn atoms mainly exist in the Si thin film substrate in the form of Mn4Si7 nanocrystalline grains,the substitutional or interstitial Mn atoms scarcely exist.
【Fund】: 国家自然科学基金重点项目(批准号:10635060);; 国家自然科学基金(批准号:10725522)资助的课题~~
【CateGory Index】: O484.43
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