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| 1 |
YANG Ke-tao,CHEN Guang-hui(Department of Materials Science and Engineering,NanjingUniversity of Aronautics and Astronautics,Nanjing 210016);The Reseach Progress of AlN Thin Films[J];Shandong Ceramics;2005-01 |
| 2 |
ZHOU Jicheng, SHI Zhijie(School of Physical Science and Technology,Central South University, Changsha 410083);The Development of AlN as Electronic Thin Film Material[J];Materials Review;2007-05 |
| 3 |
CHEN Wei-de,CHEN Chang-yong,BIAN Liu-fang(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China);Room-temperature Luminescence from Er-doped SiO_x Films Containing Si Nanoparticles[J];Chinese Journal of Luminescence;2005-05 |
| 4 |
DONG Yu-cheng,GUO Zhi-you, BI Yan-jun,LIN Zhu(Optoelectronic Material and Technology Institute,South China Normal University,Guangzhou 510631,China);First-principles Calculation of AlN Electronic Structure by Doping with Zn and Cd[J];Chinese Journal of Luminescence;2009-03 |
| 5 |
QIAO Tao1,ZHENG Xue-lin1,2,DENG Ping1,WENG Jia-bao1,2(1.College of Chemistry and Materials Science,Fujian Normal University,Fuzhou 350108,China;2.Key Laboratory of Polymer Materials of Fujian Province,Fuzhou 350007,China);Fabrication and Characterization of Self-assembly Ultra-thin Films Based on Poly(vinylpyrrolidone) and Polyaniline[J];Journal of Fujian Normal University(Natural Science Edition);2009-02 |
| 6 |
HUANG Jipo,WANG Lianwei,LIN Chenglu State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Metallurgy,Shanghai,200050,China;AlNAn Excellent Multifunctional Wide Bandgap Semiconductor[J];JOURNAL OF FUNCTIONAL MATERIALS;1999-02 |
| 7 |
Cui DongMeng, Xie Quan, Chen Qian, Zhao FengJuan & Li XuZhen Institute of New Type Optoelectronic Materials and Technology, College of Electronic Science & Information Technology, Guiyang 550025, China;First-principles calculations on the electronic structure and optical properties of Ru_2Si_3[J];Science in China(Series G:Physics,Mechanics & Astronomy);2009-10 |
| 8 |
ZHANG Li-Min FAN Guang-Han DING Shao-Feng (Institute of Opto-Electronic Materials and Technology,South China Normal University,Guangzhou 510631,P. R. China);First-principles Calculation of AlN Electronic Structure by Doping with Mg and Zn[J];Acta Physico-Chimica Sinica;2007-10 |
| 9 |
YUAN FANG CHENG 1)2)RAN GUANG-ZHAO 1)CHAN YUAN 1)ZHANG BO RUI 1)QIAO YONG PING 1) FU JI-SHI 1)QIN GUO GANG 1) MA ZHEN-CHANG 3)ZONG WAN-HUA 3) 1)(Department of Physics, Peking University, Beijing1000871, China);ROOM-TEMPERATURE 1.54μm Er~(3+) PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING[J];Acta Physica Sinica;2001-12 |
| 10 |
Wang Ying-Long+{1)} Zhou Yang+{1)} Chu Li-Zhi+{1)} Fu Guang-Sheng+{1)} Peng Ying-Cai+{2)} 1) (College of Physics Science and Technology,Hebei University,Baoding 071002,China) 2) (College of Electronic and Informational Engineering,Hebei University,Baoding 071002,China);Influence of the ambient pressure of Ar on the average size of Si nanoparticles deposited by pulsed laser ablation[J];Acta Physica Sinica;2005-04 |
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