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《Acta Physica Sinica》 2013-21
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Influence of the growth conditions on the transparent conductive properties of ZnO:Al thin films grown by pulsed laser deposition

Han Jun;Zhang Peng;Gong Hai-Bo;Yang Xiao-Peng;Qiu Zhi-Wen;Zi Min;Cao Bing-Qiang;Key Lab of Inorganic Functional Material in Universities of Shandong,School of Material Science and Engineering,University of Jinan;  
The influences of aluminum doping,oxygen pressure,and substrate temperature on the transparent conductive properties of ZnO:Al(AZO) films grown by pulsed laser deposition(PLD) were investigated using scanning electron microscope,atomic force microscope,X-ray diffraction,Hall effect measurements,and optical transmission spectrum.When the aluminum doping concentration is over 0.5 wt%,all the PLD grown AZO films are degenerated and the aluminum donors are thermal ionized even at a low temperature of 80 K.As a result,the bandgap of AZO film shows blue shifts due to the Bernstein-Moss effect as further confirmed by optical transmission spectrum.The influences of the oxygen pressure and substrate temperature on the transparent conductive property of AZO films were further studied.When the oxygen pressure is 1 Pa and the substrate temperature is 200℃,the best conductivity property of AZO thin film is obtained with Hall mobility of 28.8 cm2/V·s and film resistivity of 2.7 × 10-4Ω ·cm.Moreover,the light transmittance in the visible range exceeds 85%.However,as the oxygen pressure and temperature continue to increase,the film resistivity will increase.
【Fund】: 国家自然科学基金(批准号:11174112 51002065);; 山东省泰山学者基金(批准号:TSHW20091007);; 教育部新世纪优秀人才支持计划(批准号:NCET-11-1027);; 山东省杰出青年基金资助(批准号:JQ201214)资助的课题~~
【CateGory Index】: O484.4
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【Co-citations】
Chinese Journal Full-text Database 6 Hits
1 REN Mingfang1,FENG Xiang2,WANG Hua1,XU Jiwen1(1.School of Material Science and Engineering,Key Laboratory of Information Materials of Guangxi,Guilin University of Electronic Technology,Guilin 541004,China;2.Department of Electromechanical Engineering,Zhengzhou Railway Vocational & Technical College,Zhengzhou 450052,China);Influence of doping content and sputtering power on the structure and resistivity of ZnO:Al thin films[J];Ordnance Material Science and Engineering;2010-02
2 XU Ji-wen,WANG Hua,REN Ming-fang,CHENG Gang(Department of Information Material Science and Engineering,Guilin Universityof Electronic Technology,Guilin 541004,China);Properties of ZAO Films Prepared by Non-reactive DC Magnetron Sputtering at Room Temperature[J];Electrical Engineering Materials;2007-02
3 FANG Hua-jing,YAN Qing-feng,WANG Xiao-qing,SHEN De-zhong(State Key Laboratory of New Ceramics and Fine Processing,Department of Chemistry,Tsinghua University,Beijing 100084,China);Preparation of AZO Films with Highly Preferred Orientation by Two-step Method[J];Journal of Synthetic Crystals;2013-07
4 Wang Zhian;Wang Junsheng;Han Dakai;Tong Honghui;Southwest Institute of Physics;;EFFECT OF SUBSTRATE TEMPERATURE ON STRUCTURAL AND PHOTOELECTRIC PROPERTIES OF AZO THIN FILMS[J];Acta Energiae Solaris Sinica;2013-02
5 LIU Xin-yu1,2,LI Ha-qi1,2,JIANG Ming-hong1,2(1.Department of Information Material Science and Engineering,Guilin University of Electronic Technology,Guilin 541004,China; 2.key Laboratory of Information Material,Guilin 541004,China);Preparation and Properties of ZAO Ceramic Targets by Conventional Solid-state Reaction Method[J];Journal of Hunan University of Science & Technology(Natural Science Edition);2008-01
6 REN Ming-fang1,WANG Hua1,2,XU Ji-wen1,YANG Ling1(1.Department of Information Material Science and Engineering,Guilin University of Electronic Technology,Guilin541004,China2.Key Laboratory of Information Materials of Guangxi,Guilin University of Electronic Technology,Guilin541004,China);Influence of Doping Content and Sputtering Parameter on Resistivity and Transmittancce of ZnO∶Al Thin Films Prepared by DC Magnetron Sputtering at Room Temperature[J];Chinese Journal of Liquid Crystals and Displays;2009-01
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