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《Microcomputer & Its Applications》 2013-13
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A 2~(nd)-order temperature compensated CMOS bandgap reference circuit

Zhang Jing 1 ,Zhang Chuanwu 2 ,Chen Xiangdong 1 ,Fan Chuliang 1 ( 1 . School of Information Science & Technology , Southwest Jiaotong University , Chengdu 610031 , China ; 2 . School of Electrical and Information Engineering , Southwest University for Nationalities , Chengdu 610041 , China )  
This paper proposes a 2nd -order temperature compensated CMOS bandgap reference circuit which can be used with a standard CMOS process. We adopt the PTAT2 current circuit, which makes use of the current characteristics of the saturated region of MOSFET and has the advantage of fully compatible with standard CMOS processes. Due to it′s difficult to start the circuit for this process and supply voltage, we introduce a resistance start properly. The cascade and serious BJT in the core of reference circuit improves the power supply rejection ratio and reduces the temperature coefficient effectively. We adopt the HSPICE software simulate all the circuit based on TSMC 0.35 μm CMOS process. The simulation results show that the temperature coefficient is 2.91×10-6 V/℃ and PSRR at low frequencies is up to 96 dB at 3.3 V power supply and startup time is 7 μs.
【Fund】: 国家自然科学基金(61171050);; 西南民族大学中央高校基本科研业务费专项基金项目(11NZYQN19)
【CateGory Index】: TN432
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