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《Journal of Shaanxi University of Science & Technology》 2005-04
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THE EFFECTS OF ANNEALING TIME ON THE STRUCTURAL AND SHEET RESISTANCE OF ITO FILMS FROM X-RAY DIFFRACTION TECHNIQUES

MA Ying(School of Electrical and ELectronic Engineering, Shaanxi University of Science & Technology,Xianyang 712081,China)  
The Sn-doped In_2O_3 thin films were prepared on the glass substrates at different annealing time by sol-gel method with InCl_3·4H_2O and SnCl_4·5H_2O.The structure of these films is determined by X-ray diffraction.The XRD analysis of sample shown that the crystal-grain dimension, the diffraction peak intensity and the crystal lattice constant were affected by annealing time.As the annealing time is 15 minute, the films have bigger grain size, tends to have a random orientation, and have less distortion of crystal lattice ,at the same time , the block resistance of the films is least.
【Fund】: 陕西省教育厅基金资助项目(No.03JK161);; 陕西科技大学基金资助项目(No.ZX04-34)
【CateGory Index】: TG156
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【Citations】
Chinese Journal Full-text Database 4 Hits
1 MA Ying,ZHANG Fang-hui,JIN Bao-an,MU Qiang,YUAN Tao-li (College of Electrical and Electronic Engineering,Shaanxi University of Science and Technology, Xianyang712081,China);Tin-doped In_2O_3 Thin Films Prepared by Sol-gel Method[J];液晶与显示;2004-05
2 MA Ying,ZHANG Fang hui,Mu Qiang (College of Electrical and Electronic Engineering, Shaanxi University of Science and Technology,Xianyang 712081,China);PROPERTIES,PREPARATION AND APPLICATIONS OF THE TRANSPARENT AND CONDUCTIVE GLASS WITH ITO FILM[J];陕西科技大学学报;2003-01
3 Wang Gang,Liu Hongyu, Zhao Chao , Yang Bailiang, Huang Ximin (Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021) (North Liquid Crystal Engineering Research and Development Center, Changchun 130021) (* Department of Elect;Preparation and Characterization of Low Resistance and High Transmittance ITO Films[J];液晶与显示;1999-01
4 ;Semiconducting Mechanism, Aplications and Fabrication of ITO Films[J];材料导报;1997-04
【Secondary Citations】
Chinese Journal Full-text Database 10 Hits
1 MA Ying,ZHANG Fang hui,Mu Qiang (College of Electrical and Electronic Engineering, Shaanxi University of Science and Technology,Xianyang 712081,China);PROPERTIES,PREPARATION AND APPLICATIONS OF THE TRANSPARENT AND CONDUCTIVE GLASS WITH ITO FILM[J];陕西科技大学学报;2003-01
2 PANG Mao lin, LIN Jun, YU Min, ZHOU Yong hui, HAN Xiu mei, WANG Shu bin(Laboratory of Rare Earth Chemistry and Physics, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China,;Preparation and Applications of Luminescent Film[J];液晶与显示;2002-05
3 FAN Zhi xin,SUN Yi cai and CHEN Jiu lin(Department of Applied Physics,Hebei University of Technology,Tianjin 300130,China);Theoretical Calculation of Optimum Doping Content in Oxide Semiconductor Transparent Conductive Films[J];半导体学报;2001-11
4 Yang Zhiwei 1,Han Shenghao 1,Yang Tianlin 2,Ye Lina 1,Ma Honglei 1,Han Xigui 3 (1 physics Department of Shandong University,Jinan 250100,China;2.Zibo University,Zibo 255091,China; 3.Optoelectronic Materials and Devices Institute of Shandong Unive;STUDY ON RELATIONSHIP BETWEEN THE PROPERTIES OF FLEXIBLE ITO FILMS AND FABRICATING PARAMETERS[J];太阳能学报;2001-03
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7 Wang Gang,Liu Hongyu, Zhao Chao , Yang Bailiang, Huang Ximin (Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021) (North Liquid Crystal Engineering Research and Development Center, Changchun 130021) (* Department of Elect;Preparation and Characterization of Low Resistance and High Transmittance ITO Films[J];液晶与显示;1999-01
8 Huang Shiyong, Qu Fengqin, Miao Ye (The Department of Physics of Yantai University);The Properties of ITO Films Effected by DC or RF Magnetron Sputtering[J];真空;1999-02
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