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《Journal of Xidian University》 2005-04
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State of the arts Cu interconnect and its reliability in ULSI

HAO Yue~1,SHAO Bo-tao~1,MA Xiao-hua~1,HAN Xiao-liang~1,WANG Jian-ping~2(1. Research Inst. of Microelectronics, Xidian Univ., Xi′an 710071, China; 2. SMIC, Shanghai 201203, China)  
With the development of higher integration and reliability of IC, the reliability of copper interconnects is more important than ever. In this paper, the key processes of Cu interconnects are analyzed and compared, and the author lay emphasis on the development of the Cu interconnect and Cu vias. The present problems and discussions of fundamental reliability units of Cu interconnects are introduced. Lastly, some methods are given to solve these key problems in Cu interconnects.
【Fund】: 国家“863”计划资助项目(2003AA1Z1630)
【CateGory Index】: TN405
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【Citations】
Chinese Journal Full-text Database 1 Hits
1 Wang Yangyuan and Kang Jinfeng(Institute of Microelectronics,Peking University,Beijing 100871,China);Development of ULSI Interconnect Integration Technology--Copper Interconnect with Low k Dielectrics[J];Chinese Journal of Semiconductors;2002-11
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 LIU Xing-gang,ZHANG Cong-chun,YANG Chun-sheng,SHI Jin-chuan(Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education,National Key Laboratory of Micro /Nano Fabrication Technology,Research Institute of Micro/Nano Science and Technology,Shanghai Jiao Tong University,Shanghai 200030,China);Study of a Novel Freestanding Cu Interconnect Process[J];Semiconductor Technology;2007-09
2 Kuang Jia,Huang He(Institute of Computer,South China Normal University,Guangzhou 510631,China);Study on VDSM Interconnect Characteristics and RC Delay[J];Semiconductor Technology;2008-01
3 Zhang Congchun,Liu Xinggang,Shi Jinchuan,Yang Chunsheng(National Key Lab.of Micro/Nano Fabrication Technology,Key Laboratory for Thin Film andMicrofabrication Technology of Ministry of Education,Research Institute of Micro/Nano Science and Technology,Shanghai Jiao Tong University,Shanghai 200030,China);Performance of RF Sputtering Deposited TaN as the Diffusion Barrier of Cu Interconnection[J];Semiconductor Technology;2008-01
4 JIANG Yu,WU Zhen-yu,WANG Jia-you(Institute of Microelectronics,Xidian University,Xi'an 710071,China);Effects of Low-k Fluorinated Amorphous Carbon as Inter-Level Dielectrics on Chip Performance[J];Micronanoelectronic Technology;2005-08
5 SU Xiang-lin,WU Zhen-yu,WANG Jia-you,YANG Yin-tang(Microelectronics Institute,Xidian University,Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xi'an 710071,China);Development of Low-k Materials as Inter-Level Dielectrics[J];Micronanoelectronic Technology;2005-10
6 YIN Rui,LIU Yu-ling,LI Wei-wei,ZHANG Jian-xin(Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,China);Study of the Chemical-Mechanical Global Planarization of Low-k Dielectric in ULSI[J];Micronanoelectronic Technology;2006-03
7 Han Xiang,Li Yi,Wu Wengang,Yan Guizhen,and Hao Yilong(National Key Laboratory of Micro/Nano Fabrication Technology,Institute of Microelectronics, Peking University,Beijing 100871,China);Electroless Copper and Nickel Plating on Single-Crystal Silicon for MEMS Applications[J];Chinese Journal of Semiconductors;2005-05
8 Li Zhiguo,Xiao Xia,Zhang Xinhui,and Yao Suying (School of Electronic and Information Engineering,Tianjin University,Tianjin 300072,China);Dispersive Characteristics of Surface Acoustic Waves for Measuring Mechanical Properties of Low-k Dielectrics Used in ULSI[J];Chinese Journal of Semiconductors;2005-10
9 Wang Hui1,Zhu Jianjun2,Wang Guohong2,Bruynseraede C3,and Maex K 3,4(1 School of Microelectronics,Shanghai Jiaotong University,Shanghai 200030,China) (2 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) (3 IMEC,Leuven B-3001,Belgium) (4 E.E.Department,K.U.Leuven,Leuven B-3001,Belgium);Effects of Cu-Wire Surface Fluctuations on Early Failures[J];Chinese Journal of Semiconductors;2005-12
10 Li Xin1,Janet M.Wang2,Tang Weiqing3,and Wu Huizhong1(1 Department of Computer Science and Technology,Nanjing University of Science and Technology,Nanjing 210094,China)(2 Department of Electrical and Computer Engineering,University of Arizona,Arizona AZ8742,USA)(3 Institute of Computing Technology,Chinese Academy of Sciences,Beijing 100080,China);Stochastic Analysis of Interconnect Delay in the Presence of Process Variations[J];Journal of Semiconductors;2008-02
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 WU Feng-shuna,b, ZHANG Jing-songa, WU Yi-pinga,b,ZHENG Zong-lina, WANG Lei1 , QIAO Kai1a(Huazhong Univ. of Science & Technology a. State Key Lab. of Plastic Forming Simulation & Die Technology;b. Institute of Microsystems, Wuhan 430074,China);Progress of Electromigration in IC Interconnect Metallic Line[J];Semiconductor Technology;2004-09
2 RUAN Gang 1 and XIAO Xia 2 (1 ASIC and System State Key Laboratory,Fudan University,Shanghai 200433,China) (2 Center of Microtechnology,Technical University of Chemnitz,Chemnitz D-09107 ,Germany);Simulation of Thermal Performance of ULSI Inte rconnect System[J];Chinese Journal of Semiconductors;2001-08
3 Wang Yangyuan and Kang Jinfeng(Institute of Microelectronics,Peking University,Beijing 100871,China);Development of ULSI Interconnect Integration Technology--Copper Interconnect with Low k Dielectrics[J];Chinese Journal of Semiconductors;2002-11
4 Xiao Xia~ 1, ,Yao Suying~1,and Ruan Gang~2(1 Center of ASIC,School of Electronic and Information Engineering,Tianjin University,Tianjin 300072,China)(2 School of Information Science and Engineering,Fudan University,Shanghai 200433,China);Influence of Interconnection Configuration on Thermal Dissipation of ULSI Interconnect Systems[J];Chinese Journal of Semiconductors;2006-03
5 GUO Jia Hei,ZHU Liu hua (Hua Yue MicroElectron LTD Zhejiang Shaoxing 312016);The Problem About Stress Migration in the VLSI Manufacture[J];Journal of Electron Devices;2000-04
6 LI Zhi-guo,LU Zhen-jun (The School of Electronics and Control Engineering,Beijing Polytechnic University,Beijing 100022,China);Numerical Simulation of Electric and Thermal Characteristic in ULSI Copper-Filled Inteconnect Via Hole[J];Acta Electronica Sinica;2003-07
7 HE Xu-shu,HUANG He,PEI Song-wei,BAO Su-su(School of Computer,South China Normal University,Guangzhou 510631,China);THERMAL ANALYSIS OF MULTILEVEL METAL ROUTING IN 0.1 μm ULSI TECHNOLOGY[J];Journal of South China Normal University(Natural Science Edition);2006-03
8 PEI Song-wei,HUANG He,HE Xu-shu,BAO Su-su(School of Computer,South China Normal University,Guangzhou,Guangdong 510631,P.R.China);Effects of Via on Temperature Distribution of Metal Wires[J];Microelectronics;2006-04
9 ZHANG Jian min (Department of Physics, Shaanxi Normal University, 710062 Xi′an, Shaanxi, China);Stress as a function of temperature and isothermal relaxation in copper films on silicon substrates[J];JOURNAL OF SHAANXI NORMAL UNIVERSITY(NATURAL SCIENCE EDITION);2000-01
10 XU Xiao-cheng (Shanghai Huahong Group Co.,Ltd., Shanghai 200020,China);On the Interconnecting Technology of Metal Copper Used in IC with Deep Sub-micron Processing[J];Microelectronic Technology;2001-06
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