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Luminescent Mechanism of SrS∶Ce TFEL

Xu Zheng, Xu Xurong( Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044, China) , Xu Chunxiang, Lu Zuhong( National Laboratory of Molecular and Biomolecular Electronics, Southeast University, Nanjing 210096, China ),  
The influence of delocalization possibility on the mixing interaction between the conduction band of SrS and the excited levels of Ce 3+ was analysed. This mixing interaction makes the electrons located at the excited states of luminescent centers easily be ionized into the conduction band of host under the high electric field, and makes the conduction electrons easily be captured by the ionized luminescent centers under the low electric filed. The measurement of emission wave forms of SrS∶Ce TEFL showed that only a leading edge emission peak was observed for one sample and the leading and trailing edge emission peaks were observed for another in a half period of sinusoid applied voltage. This difference is related to the influences of sulfur vacancies on the excitation and emission processes. The leading edge emission is dominantly attributed to discrete luminescence caused by direct impact excitation and the trailing edge emission, and a part of leading edge emission are attributed to recombination luminescence caused by impact ionization and delocalization.
【CateGory Index】: TB43
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