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《Chinese Rare Earths》 2011-03
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Effect of Dy Doping on Microstructure of ZnSe Thin Films

WU Rong,LI Rong-ping,HE Zhi-gang,AN Xiao-hui,LI Zhong-xian(Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Auonomous Region, College of Physical Science and Technology,Inner Mongolia University,Huhhot 010021,China)  
ZnSe thin films were prepared by vacuum evaporation on glass substrate.A dysprosium doping was made in the thin films by double-source evaporation.The films were characterized with XRD and UV spectrophotometer.The result showed that the ZnSe thin films were the best when Zn∶Se=0.9∶1.Dy doping improved their optical transmission,did not change the sample's crystal structure,enhanced their lattice constant and crystal cell volume,and minished its grain size and internal stress.
【Fund】: 内蒙古教育厅项目(09006)
【CateGory Index】: O484.41
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