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《Chinese Journal of Liquid Crystals and Displays》 2004-05
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Tin-doped In_2O_3 Thin Films Prepared by Sol-gel Method

MA Ying,ZHANG Fang-hui,JIN Bao-an,MU Qiang,YUAN Tao-li (College of Electrical and Electronic Engineering,Shaanxi University of Science and Technology, Xianyang712081,China)  
The Sn-doped In_2O_3 thin films were prepared on the glass substrates by sol-gel method with InCl_3·4H_2O and SnCl_4·5H_2O. The studies were carried out on optical and electrical properties of ITO films affected by parameters,such as Sn doping content,annealing temperature and annealing time.The sheet resistance of the ITO films is properly 300 Ω/□,the average visible transmittance is about 80 %,the resistivity is about 4.08×10~(-3) Ω·cm,the optical and electrical properties of the ITO films have met the requirements of the transparent electrode used in TN-LCD.
【Fund】: 陕西省教育厅基金资助项目(No.03JK161)
【CateGory Index】: O484.4
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