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《Chinese Journal of Liquid Crystals and Displays》 2006-05
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Effect of Sn Doping Content on Sheet Resistance and Structural Properties of ITO Films

MA Ying~1,LU Qing-li~2,ZHANG Fang-hui~1,YUAN Tao-li~1,ZHANG Mai-li~1 (1.School of Electrical and Electronic Engineering,Shaanxi University of Science & Technology, Xianyang 712081,China; 2. School of Computer and Information Engineering, Shaanxi University of Science & Technology, Xianyang 712081,China)  
Indium tin oxide(ITO)thin films were prepared on the glass substrates by a sol-gel process.The precursor solution was prepared by mixing indium chloride and tin chloride dissolved in ethanol. ITO thin films containing 11 %~33 % Sn(mass fraction) by weight were successfully prepared by heat treatment at 450 ℃.The resistivity of ITO films was minimised by optimizing the tin doping concentration in the solution.The electrical and structural properties of ITO thin films were investigated.The electrical resistivity was measured by using the four-point probe method.The ITO thin films containing 20 % Sn showed a minimum resistivity.X-ray diffraction measurements were performed to determine the crystallinity of the ITO films, which showed that they were polycrystalline with a cubic bixbyite structure.The size of crystal-grain,the space constant of crystal lattice and the direction of crystal faces are affected by the tin blends of ITO film.When the crystal-grain is comparatively greatly,the mutation of crystal lattice and the excellent mindset are small, ITO film electric resistance will be least.
【Fund】: 国家自然科学基金资助项目(No.50372038);; 陕西科技大学基金资助项目(No.ZX04-34)
【CateGory Index】: TM24
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