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《Chinese Journal of Liquid Crystals and Displays》 2011-02
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Property Comparison Between IGZO TFT and ZnO TFT

WU Wei-jing,YAN Jun,XU Zhi-ping,LAI Zhi-cheng(School of Materials Science and Engineering,South China University of Technology, Guangzhou 510641,China,E-mail:wuwj@scut.edu.cn)  
This paper focuses on the comparison and analysis of ZnO TFT's and IGZO TFT's optical and electrical performance,and the stability of threshold voltage.The comparison results indicate that both ZnO and IGZO thin film materials have a simply high optical transmittance in the range of visible spectrum.Furthermore,the key electrical properties of IGZO TFT are better than that of ZnO TFT under the same deposition condition,such as the field effect mobility,the on/off ratio,the threshold voltage and the subthreshold slope.The leakage current of both ZnO TFT and IGZO TFT is low,and the difference between them is rather small.In addition,the threshold voltage of ZnO TFT is shifted under the positive or negative gate bias stress.However,the threshold voltage shift of IGZO TFT is smaller than that of ZnO TFT,and there is no threshold voltage shift for IGZO TFT under the negative gate bias stress.Therefore,IGZO TFT is more stable than ZnO TFT.In conclusion,IGZO thin film material is more suitable to be the active layer of the next generation of TFTs.
【Fund】: 中央高校基本科研业务费专项资金资助(No.2009ZM0205)
【CateGory Index】: TN321.5
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