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YANG RUIXIA(Hebei Institute of Technology)LIGUANGPING WANG QIN(Tianjin Electronic Materials Research lnstitute)  
The distributions of ionized and neutral EL2 concentrations are measured bythe multiple wavelength infrared absorption method in the undoped LECSI GaAs.The distributions of the total EL2 concentration and its Fermi occupancy functionare also obtained from the measurement of the distrbutions of the ionized andneutral EL2 concentrations.The results indicate that all of the distributions ofthe ionized EL2 concentration,neutral EL2 concentration,total EL2 concentra-tion, and EL2 Fermi occupallcy function are inhomogeneous;that both total andneutral EL2 concentrations radial distributions are W一shaped;and that the W-shaped radial distribution of the neutral EL2 concentration is not due to thefluctuation of the Fermi occupancy fullction.
【CateGory Index】: O174
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Chinese Journal Full-text Database 6 Hits
1 Yang Ruixia (Hebei University of Technology, Tianjin,300130,CHN) Li Guangping (Tianjin Electronic Material Research Institute, 300192,CHN);Dependence of the Electrical Properties on EL2 Concentration and Carbon Acceptor Concentration in Undoped Semi insulating LEC GaAs[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;1999-04
2 YANG Ruixia (Hebei University of Technology, Tianjin, 300130, CHN) LAI Zhanping (Tianjin Electronic Materials Reserach Institute, 300192, CHN);Effects of As Pressure Duing Annealing on Defects for Semi-insulating GaAs[J];Research & Progress of Solia State Electronics;2002-03
3 YANG Rui-xia, LIU Li-feng, GUO Hui (School of Electrical Engineering and information Technology Hebei University of Technology, Tianjin 300130, China );Effects of Quenching on Deep Donor Defect EL_2 in GaAs[J];Journal of Hebei University of Technology;2001-01
4 LIU Li-Feng, YANG Rui-Xia, GUO Hui (School of Electrical Engineering and Information Technology, Hebei University of Technology Tianjin 300130, China);The Annealing Effects on Electronic Properties for Undoped Semi-insulating LECGaAs[J];Journal of Hebei University of Technology;2001-05
5 LIU Li feng, YANG Rui xia, GUO Hui (School of Electrical Engineering and Information Technology,Hebei University of Technology,Tianjin 300130,China);Study on Mechanism of Efects on El2 in GaAs by Annealing and Quenching[J];Infrared Technology;2002-01
6 Yang Ruixia1,Zhang Fuqiang2 and Chen Nuofu2 (1.Institute of Electricity and Information, Hebei University of Tech nology,Tianjin 300130,China;2.Institute of Semiconductors, Chinese Academy of Sc iences,Beijing 100083,China);Effects of Annealing on Native Defects and Electrical Properties of Undoped Semi-insulating LEC GaAs During Annealing[J];Chinese Journal of Rare Metals;2001-06
Chinese Journal Full-text Database 6 Hits
1 Xie Zili (Nanjing Electronic Device Institute,Nanjing 210016);EL2 Defect and Its Annealing in In Doped GaAs Single Crystal[J];SEMICONDUCTOR TECHNOLOGY;1999-03
2 Pan Jiaq;La Fuyun;Yuan Shuzhong and Li Xiaomin(Department of Electronics Science Nankai Univer,sity Tianjin 300071)Zhuang Wanru(National integrated Oploeletronics Laboratory Beijing 100083);Study of ps GaAs Photoconductive Switch[J];CHINESE JOURNAL OF SEMICONDUCTORS;1994-04
3 Shi Wei(Xi′an University of Technology, Xi′an 710048)Liang Zhenxian(Xi′an Jiaotong University, Xi′an 710049);Optically Activated Charge Domain Phenomena in High Gain Ultra Fast High Voltage GaAs Photoconductive Switches[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-01
4 Yang Ruixia(Hehei Institute of Technology, Tianjin, 300130);Study on Improving Mechanism of Uniformity of EL2Distribution in Undoped LEC SI GaAs by Heat Treatment[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;1994-01
5 Ruixia YANG Hebei University of Technology,300130 Tianjin Kaisheng HU,Zhihui ZHOU and Xiaobing GUO Tianjin Electronic Materials Research Institute,300192 Tianjin;Photocurrent Spectra of Undoped LECSIGaAs[J];SPECTROSCOPY AND SPECTRAL ANALYSIS;1999-01
6 Zhao Huijuan; Niu Hanben(Xi'an Institute of Optics and Precision Mechanics, Academia Sinica 710068);THE THEORETICAL ANALYSIS OF THE LOCK-ON EFFECT IN PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES[J];ACTA PHOTONICA SINICA;1997-01
【Secondary References】
Chinese Journal Full-text Database 5 Hits
1 Xu Yuesheng 1,Fu Shenghui 1,Liu Caichi 1,Wang Haiyun 1,Wei Xin 1,and Hao Jingchen 2(1 Heibei University of Techonology,Tianjin 300130,China)(2 No.13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China);Influence of AB Microdefects in LEC Semi-Insulating GaAs Substrate on Property of MESFET[J];Chinese Journal of Semiconductors;2005-01
2 Sun Weizhong, Niu Xinhuan, Wang Haiyun, Liu Caichi, Xu Yuesheng (Hebei University of Technology, Tianjin 300130, China);Study on Impurity and Micro-Defects of ND-SI-GaAs[J];Rare Metal Materials and Engineering;2006-10
3 LI Xi-yang DAI Hui-ying SHI Wei HOU Jun-yan YANG Li-na (Project University of Airforce,Xi'an University of Technology,Xi'an 710073,China);Dark Resistivity of GaAs Photoconductive-switch Before and After Break Down[J];Journal of Atmospheric and Environmental Optics;2006-06
4 HU Jin1,DU Lei2,ZHANG Hai-hui1,YANG Guang-lin2(1 College of Mechanical and Electronic Engineering,Northwest A&F University,Yangling,Shaanxi 712100,China)(2 School of Technical Physics,Xidian University,Xi'an 710071,China);Influence of ~(60)Co Radiation Damage on Performance of Light Emitting Diode[J];Acta Photonica Sinica;2010-06
5 Liu Hongyan Sun Weizhong Wang Na Hao Qiuyan Liu Caichi(Institute of Information Function Materials,Hebei University of Technology,Tianjin 300130);Investigation of the native defects in LEC SI-GaAs by optical microscopy[J];Modern Instruments;2008-03
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