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《JOURNAL OF APPLIED SCIENCES》 1995-02
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DISTRIBUTION OF TOTAL EL2 CONCENTRATION AND ITS FERMI OCCUPANCY FUNCTION IN UNDOPED LECSI GaAs

YANG RUIXIA(Hebei Institute of Technology)LIGUANGPING WANG QIN(Tianjin Electronic Materials Research lnstitute)  
The distributions of ionized and neutral EL2 concentrations are measured bythe multiple wavelength infrared absorption method in the undoped LECSI GaAs.The distributions of the total EL2 concentration and its Fermi occupancy functionare also obtained from the measurement of the distrbutions of the ionized andneutral EL2 concentrations.The results indicate that all of the distributions ofthe ionized EL2 concentration,neutral EL2 concentration,total EL2 concentra-tion, and EL2 Fermi occupallcy function are inhomogeneous;that both total andneutral EL2 concentrations radial distributions are W一shaped;and that the W-shaped radial distribution of the neutral EL2 concentration is not due to thefluctuation of the Fermi occupancy fullction.
【CateGory Index】: O174
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【References】
Chinese Journal Full-text Database 6 Hits
1 Yang Ruixia (Hebei University of Technology, Tianjin,300130,CHN) Li Guangping (Tianjin Electronic Material Research Institute, 300192,CHN);Dependence of the Electrical Properties on EL2 Concentration and Carbon Acceptor Concentration in Undoped Semi insulating LEC GaAs[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;1999-04
2 YANG Ruixia (Hebei University of Technology, Tianjin, 300130, CHN) LAI Zhanping (Tianjin Electronic Materials Reserach Institute, 300192, CHN);Effects of As Pressure Duing Annealing on Defects for Semi-insulating GaAs[J];Research & Progress of Solia State Electronics;2002-03
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1 Xie Zili (Nanjing Electronic Device Institute,Nanjing 210016);EL2 Defect and Its Annealing in In Doped GaAs Single Crystal[J];SEMICONDUCTOR TECHNOLOGY;1999-03
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1 Xu Yuesheng 1,Fu Shenghui 1,Liu Caichi 1,Wang Haiyun 1,Wei Xin 1,and Hao Jingchen 2(1 Heibei University of Techonology,Tianjin 300130,China)(2 No.13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China);Influence of AB Microdefects in LEC Semi-Insulating GaAs Substrate on Property of MESFET[J];Chinese Journal of Semiconductors;2005-01
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