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Surface-emitting distributed-feedback semiconductor lasers and grating-coupled laser diodes

QI Xiao-dong1,2,YE Shu-juan1,2,ZHANG Nan1,2,QIN Li1,WANG Li-jun1(1.Changchun Institute of Optics,Fine Machines and Physics,Chinese Academy of Sciences,Changchun 130033,China;2.Graduate University of Chinese Academy of Sciences,Beijing 100049,China)  
The principles and structures of Surface-emitting Distributed-feedback Bragg(SE-DFB)semiconductor lasers,especially curved-grating coupled SE-DFB lasers,are described,then,their characteristics are discussed and compared with that of other semiconductors.It points out that the SE-DFB lasers based on special diffractive characteristics of curved grating can achieve the mode control and two-dimensional leaky-mode coupling of laser arrays,and can obtain the laser with narrow line width(typically 0.08 nm),small divergence angle(typically 0.5 mrad),high brightness(3 W(CW)near-diffraction limit emitting from a single device)and high power(73 W maximum in a single device and kW level in arrays).After reviewing the development,present status and new opportunities in future of the SE-DFB devices,it emphasizes that as the curved-grating coupled SE-DFB has both strengths from side emitting and surface emitting devices,it will have great research significance and wide application prospect by introducing into semiconductor lasers and arrays with different material systems and structures.
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