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《China Light & Lighting》 2010-01
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Experimental and Theoretical Analysis on GaN Multiple Quantum Well Blue LED

Li Weijun(National Center of Supervision&Inspection on Electric Light Source Quality(Shanghai),China National Lighting Fitting Quality Supervision Testing Center(CLTC),Shanghai Alpha Lighting Equipment Testing Ltd.(SALT),Shanghai 200233)  
A 2D simulation of electrical luminescence spectrum of InGaN/GaN multiple quantum well(MQW) blue LED by APSYS software with a dot-well model is investigated.It is found that electrical luminescence simulation results based on the quantum dot model are in agreement with the experimental data,which suggests that the In-rich quantum dots(QDs) due to the spatial inhomogeneity of the indium composition plays a very important factor of the emission mechanics of InGaN/GaN.At the same time,optical characteristics of polarization matching InGaN/AlGaInN multiple quantum are also discussed using the dot model for the first time.
【CateGory Index】: TN312.8
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1 Gu Xiao-Ling Guo Xia Wu Di Xu Li-Hua Liang Ting Guo Jing Shen Guang-Di(Beijing Photoelectronics Technology Laboratory,Beijing University of Technology,Beijing 100022,China);The effect of polarization and non-uniform carrier distribution in the GaN-based light emitting diodes[J];Acta Physica Sinica;2007-08
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1 YUAN Chen1,2,YAN Wei1,2,1.ShangHai Research Institute of MicroElectronics(SHRIME),Peking University,Shanghai 201203;2.School of Software and Microelectronics,Peking University,Beijing 100871;Corresponding author,E-mail: yanwei@ss.pku.edu.cn;LED Failure Analysis with Phenomenon of Resonant Tunneling Model[J];Acta Scientiarum Naturalium Universitatis Pekinensis;2011-06
2 MA Yue-dong,WEN Jing,WEN Yu-mei,LI Ping,ZHUANG Wei,ZHAO Xue-mei(Key Laboratory for Optoelectronic Technologies & Systems of Ministry of Education,College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China);A new method to evaluate the forward voltage of LED through luminescence spectra[J];Journal of Optoelectronics.Laser;2012-10
3 Lu Huimin,Chen Genxiang (Institute of Lightwave Technology,Beijing Jiaotong University,Beijing 100044,China);Influence of well width and barrier thickness on optoelectronic properties of InGaN/GaN multiple quantum well[J];Infrared and Laser Engineering;2011-04
4 Yan Qi-Rong Zhang Yong~+ Yan Qi-Ang Shi Pei-Pei Zheng Shu-Wen Niu Qiao-Li Li Shu-Ti Fan Guang-Han (Institute of Optoelectronic Materials and Technology,South China Normal University,Guangzhou 510631,China);Effect of an asymmetry n-AlGaN layer on performance of dual-blue wavelength light-emitting diodes[J];Acta Physica Sinica;2012-03
5 ZHUANG Rong-rong;CAI Ping;College of Physics and Information Engineering, Minnan Normal University;Zhangzhou Mingsida Electronics Company Limited;;Study on the Wavelength Shifts of GaN- based Light Emitting Diodes[J];Journal of Zhangzhou Normal University(Natural Science);2013-03
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